am9b19648_si_001.pdf (795.37 kB)
Crystalline Semiconductor Boron Quantum Dots
journal contribution
posted on 2020-03-31, 19:45 authored by Jinqian Hao, Guoan Tai, Jianxin Zhou, Rui Wang, Chuang Hou, Wanlin GuoZero-dimensional
boron structures have always been the focus of
theoretical research owing to their abundant phase structures and
special properties. Boron clusters have been reported extensively
by combining structure searching theories and photoelectron spectroscopy
(PES) experiments; however, crystalline boron quantum dots (BQDs)
have rarely been reported. Here, we report the preparation of large-scale
and uniform crystalline semiconductor BQDs from the expanded bulk
boron powders via a facile and efficient probe ultrasonic approach
in the acetonitrile solution. The obtained BQDs have 2.46 nm average
lateral size and 2.81 nm thickness. Optical measurements demonstrate
that a strong quantum confinement effect occurs in the BQDs, implying
the increase of the band gap from 1.80 eV for the corresponding bulk
to 2.46 eV for the BQDs. By injecting the BQDs into poly(vinylpyrrolidone)
as an active layer, a BQD-based memory device is fabricated that shows
a rewriteable nonvolatile memory effect with a low transition voltage
of down to 0.5 V and a high on/off switching ratio of 103 as well as a good stability.
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bulk boron powdersPES2.46 nmacetonitrile solution0.5 Vtransition voltage10 3boron quantum dotsBoron clustersphase structuresquantum confinement effectCrystalline Semiconductor Boron Quantum Dots Zero-dimensional boron structuresphotoelectron spectroscopysemiconductor BQDs2.81 nm thicknessBQD-based memory deviceOptical measurements2.46 eV1.80 eVrewriteable nonvolatile memory effectband gap
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