ao0c00795_si_001.pdf (4.4 MB)
Controlling Cu Migration on Resistive Switching, Artificial Synapse, and Glucose/Saliva Detection by Using an Optimized AlOx Interfacial Layer in a‑COx‑Based Conductive Bridge Random Access Memory
journal contribution
posted on 2020-03-17, 17:33 authored by Sreekanth Ginnaram, Jiantai Timothy Qiu, Siddheswar MaikapThe Cu migration
is controlled by using an optimized AlOx interfacial layer, and effects on resistive
switching performance, artificial synapse, and human saliva detection
in an amorphous-oxygenated-carbon (a-COx)-based CBRAM platform have been investigated for the first time.
The 4 nm-thick AlOx layer in the Cu/AlOx/a-COx/TiNxOy/TiN structure
shows consecutive >2000 DC switching, tight distribution of SET/RESET
voltages, a long program/erase (P/E) endurance of >109 cycles
at a low operation current of 300 μA, and artificial synaptic
characteristics under a small pulse width of 100 ns. After a P/E endurance
of >108 cycles, the Cu migration is observed by both
ex
situ high-resolution transmission electron microscopy and energy-dispersive
X-ray spectroscopy mapping images. Furthermore, the optimized Cu/AlOx/a-COx/TiNxOy/TiN CBRAM detects
glucose with a low concentration of 1 pM, and real-time measurement
of human saliva with a small sample volume of 1 μL is also detected
repeatedly in vitro. This is owing to oxidation–reduction of
Cu electrode, and the switching mechanism is explored. Therefore,
this CBRAM device is beneficial for future artificial intelligence
application.