nn9b04453_si_001.pdf (1017.82 kB)
Controlled Growth of Large-Area Bilayer Tungsten Diselenides with Lateral P–N Junctions
journal contribution
posted on 2019-08-23, 18:40 authored by Srinivas
V. Mandyam, Meng-Qiang Zhao, Paul Masih Das, Qicheng Zhang, Christopher C. Price, Zhaoli Gao, Vivek B. Shenoy, Marija Drndić, Alan T. Charlie JohnsonBilayer
two-dimensional (2D) van der Waals (vdW) materials are
attracting increasing attention due to their predicted high quality
electronic and optical properties. Here, we demonstrate dense, selective
growth of WSe2 bilayer flakes by chemical vapor deposition
with the use of a 1:10 molar mixture of sodium cholate and sodium
chloride as the growth promoter to control the local diffusion of
W-containing species. A large fraction of the bilayer WSe2 flakes showed a 0 (AB) and 60° (AA′) twist between the
two layers, whereas Moiré 15 and 30° twist angles were
also observed. Well-defined monolayer–bilayer junctions were
formed in the as-grown bilayer WSe2 flakes, and these interfaces
exhibited p–n diode rectification and an ambipolar
transport characteristic. This work provides an efficient method for
the layer-controlled growth of 2D materials, in particular, 2D transition
metal dichalcogenides, and promotes their applications in next-generation
electronic and optoelectronic devices.
History
Usage metrics
Categories
Keywords
layer-controlled growthambipolar transportsodium chlorideW-containing speciesvan der Waalsas-grown bilayer WSe 2 flakesgrowth promoterbilayer WSe 2 flakesControlled GrowthLarge-Area Bilayer Tungsten DiselenidesWSe 2 bilayer flakeschemical vapor depositionAAAB2 D materialssodium cholate2 D transition metal dichalcogenidesoptoelectronic devices
Licence
Exports
RefWorks
BibTeX
Ref. manager
Endnote
DataCite
NLM
DC