am8b08658_si_001.pdf (1.6 MB)
Chemical Decoration of Perovskites by Nickel Oxide Doping for Efficient and Stable Perovskite Solar Cells
journal contribution
posted on 2018-10-09, 00:00 authored by Fayin Zhang, Shanyi Guang, Meidan Ye, Kaibing Xu, Wenxi Guo, Xiangyang Liu, Hongyao XuCrystal
engineering of CH3NH3PbI3–xClx perovskite films
through modification by decoration with p-type semiconductor materials
was proposed as an efficient method for obtaining good-quality crystalline
films. A simple method is demonstrated to improve the quality of perovskite
films by adding nickel oxide (NiOx) nanoparticles
into the precursor solution. The addition of NiOx brings about high-quality crystals and convenient photo-generated
charge transport with reduced defect density owing to efficient control
of the preferred nucleation and crystal growth. The sufficient contact
between CH3NH3PbI3–xClx–NiOx and the electron-transport layer can contribute to photo-generated
carrier lifetime and transport through the optimized interface. Moreover,
it is demonstrated that a strong chemical bonding interaction between
MAPbI3–xClx and NiOx could protect perovskite materials
from oxygen and humidity corrosion, showing remarkable stability holding
∼81% of the initial power conversion efficiency (PCE) after
50 days. The device with the best PCE of 19.34% is achieved because
of the improved short-circuit current from 22.23 to 23.01 mA cm–2 and fill factor from 68.97 to 75.06%. The results
certify that this p-type charge transport material decoration method
for the optimization of perovskite films is an efficient way to optimize
the performance.