ae9b02428_si_001.pdf (1.34 MB)
Chalcogenide Perovskite BaZrS3: Thin Film Growth by Sputtering and Rapid Thermal Processing
journal contribution
posted on 2020-02-21, 17:39 authored by Corrado Comparotto, Alexandra Davydova, Tove Ericson, Lars Riekehr, Marcos V. Moro, Tomas Kubart, Jonathan ScraggTandem solar cells
based on hybrid organic–inorganic metal
halide perovskites have reached efficiencies up to 28%, but major
concerns for long-term stability and the presence of Pb have raised
interest in searching for fully earth-abundant, intrinsic chemically
stable, and nontoxic alternatives. With a direct band gap around 1.8
eV and stability in air up to at least 500 °C, BaZrS3 is a promising candidate. This work presents the first approach
of synthesizing a thin film of such compound by sputtering at ambient
temperature with a subsequent rapid thermal process. Despite the short
fabrication time, the width of the XRD diffraction peaks and the energy
and distribution of the photoluminescence response show comparable
crystalline quality to that from bulk synthesis methods. Good crystallization
required around 900 °C. Such a high temperature could be incompatible
with fabrication of tandem solar cells.
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RapidpresenceBaZrS 3ambient temperaturestabilityband gap1.8 eVearth-abundantalternativeChalcogenide Perovskite BaZrS 3synthesizingfilmconcernThin Film GrowthcandidatewidthGood crystallizationhalidebulk synthesis methodsapproachPbphotoluminescence response showperovskiteefficiencyProcessing Tandemcompoundtandemfabrication timeXRD diffraction peaksSputteringSuch
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