ic9b00158_si_001.pdf (1.66 MB)
Boron-Doped Spherical Hollow-Porous Silicon Local Lattice Expansion toward a High-Performance Lithium-Ion-Battery Anode
journal contribution
posted on 2019-03-15, 15:34 authored by Yongpeng Ren, Xiangyang Zhou, Jingjing Tang, Jing Ding, Song Chen, Jiaming Zhang, Tingjie Hu, Xu-Sheng Yang, Xinming Wang, Juan YangSilicon
(Si) attracts extensive attention as the advanced anode material for
lithium (Li)-ion batteries (LIBs) because of its ultrahigh Li storage
capacity and suitable voltage plateau. Hollow porous structure and
dopant-induced lattice expansion can enhance the cycling stability
and transporting kinetics of Li ions. However, it is still difficult
to synthesize the Si anode possessing these structures simultaneously
by a facile method. Herein, the lightly boron (B)-doped spherical
hollow-porous Si (B-HPSi) anode material for LIBs is synthesized by
a facile magnesiothermic reduction from B-doped silica. B-HPSi exhibits
local lattice expansion located on boundaries of refined subgrains.
B atoms in Si contribute to the increase of the conductivity and the
expansion of lattices. On the basis of the first-principles calculations,
the B dopants induce the conductivity increase and local lattice expansion.
As a result, B-HPSi electrodes exhibit a high specific capacity of
∼1500
mAh g–1 at 0.84 A g–1 and maintains
93% after 150 cycles. The reversible capacities of ∼1250, ∼1000,
and ∼800 mAh g–1 can be delivered at 2.1,
4.2, and 8.4 A g–1, respectively.