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BiFeO3‑Based Flexible Ferroelectric Memristors for Neuromorphic Pattern Recognition
journal contribution
posted on 2020-03-31, 18:04 authored by Haoyang Sun, Zhen Luo, Letian Zhao, Chuanchuan Liu, Chao Ma, Yue Lin, Guanyin Gao, Zhiwei Chen, Zhiwei Bao, Xi Jin, Yuewei Yin, Xiaoguang LiFlexible
ferroelectric devices have been a hot-spot topic because
of their potential wearable applications as nonvolatile memories and
sensors. Here, high-quality (111)-oriented BiFeO3 ferroelectric
films are grown on flexible mica substrates through an appropriate
design of SrRuO3/BaTiO3 double buffer layers.
BiFeO3 exhibits the largest polarization (saturated polarization Ps ≈ 100 μC/cm2, remnant
polarization Pr ≈ 97 μC/cm2) among all the reported flexible ferroelectric films, and
ferroelectric polarization is very stable in 104 bending
cycles under 5 mm radius. Accordingly, the ferroelectric memristor
behaviors are demonstrated with continuously tunable resistances,
and thus, the functionality of spike-timing-dependent plasticity is
achieved, indicating the capability of flexible BiFeO3-based
memristors as solid synaptic devices. Moreover, in artificial neural
network simulations based on the experimental characteristics of the
memristor, a high recognition accuracy of ∼90% on handwritten
digits is obtained through online supervised learning. These results
highlight the potential wearable applications of flexible ferroelectric
memristors for data storage and computing.