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Ba6Zn7Ga2S16: A Wide Band Gap Sulfide with Phase-Matchable Infrared NLO Properties
journal contribution
posted on 2017-05-31, 00:00 authored by Yan-Yan Li, Peng-Fei Liu, Li-Ming WuHigh-performance
infrared (IR) nonlinear optical (NLO) materials
with large laser damage thresholds (LDTs) are urgently needed because
the current commercially available AgGaS2, AgGaSe2, and ZnGeP2 suffer their very low LDTs which shorten
significantly their service lifetimes. Here, a novel sulfide, Ba6Zn7Ga2S16 with a very wide
band gap of 3.5 eV, has been discovered. This compound crystallizes
in the chiral trigonal R3 space group with a novel
3D framework that is constructed by ZnS4 tetrahedra, Zn3GaS10 supertetrahedra (a T2-type), and Zn3GaS10 quadri-tetrahedral clusters via vertex-sharing.
Such a novel structure exhibits desirable features which suggest a
promising NLO material: phase-matchability (PM), good NLO efficiency
(about half that of benchmark AgGaS2), and the highest
LDT among PM chalcogenides (28 times that of benchmark AgGaS2). In addition, the density functional theory (DFT) calculations
confirm its PM behavior and reveal that the second harmonic generation
(SHG) origin is mainly ascribed to the transition process from S-3p
to Ga-4p, Zn-3p, Zn-3d, and Ba-5d states; the calculated d11 coefficient of 6.1 pm/V agrees well with experimental
values.
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benchmark AgGaS 2band gapR 3 space groupAgGaSe 2T 2-typeWide Band Gap SulfideAgGaS 211 coefficientS -3pLDTZn 3 GaS 10 supertetrahedracompound crystallizesPM behaviorSHGNLO Properties High-performanceBa 6 Zn 7 Ga 2 S 16laser damage thresholdsZnGeP 2DFTnovel sulfidetransition processnovel structure exhibitsnovel 3 D frameworkservice lifetimesGa -4p Zn -3p Zn -3dNLO efficiencyZn 3 GaS 10 quadri-tetrahedral clustersZnS 4 tetrahedraIR3.5 eVBa -5d statesNLO material
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