nn6b02879_si_001.pdf (1.58 MB)
Atomically Thin Ohmic Edge Contacts Between Two-Dimensional Materials
journal contribution
posted on 2016-06-14, 00:00 authored by Marcos
H. D. Guimarães, Hui Gao, Yimo Han, Kibum Kang, Saien Xie, Cheol-Joo Kim, David
A. Muller, Daniel C. Ralph, Jiwoong ParkWith the decrease of the dimensions
of electronic devices, the
role played by electrical contacts is ever increasing, eventually
coming to dominate the overall device volume and total resistance.
This is especially problematic for monolayers of semiconducting transition-metal
dichalcogenides (TMDs), which are promising candidates for atomically
thin electronics. Ideal electrical contacts to them would require
the use of similarly thin electrode materials while maintaining low
contact resistances. Here we report a scalable method to fabricate
ohmic graphene edge contacts to two representative monolayer TMDs,
MoS2 and WS2. The graphene and TMD layer are
laterally connected with wafer-scale homogeneity, no observable overlap
or gap, and a low average contact resistance of 30 kΩ·μm.
The resulting graphene edge contacts show linear current–voltage
(I–V) characteristics at
room temperature, with ohmic behavior maintained down to liquid helium
temperatures.