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Atomic Layer Deposition of Ga2O3/ZnO Composite Films for High-Performance Forming-Free Resistive Switching Memory
journal contribution
posted on 2020-06-25, 19:06 authored by Xing Li, Jian-Guo Yang, Hong-Ping Ma, Yu-Hang Liu, Zhi-Gang Ji, Wei Huang, Xin Ou, David Wei Zhang, Hong-Liang LuThe
resistive switching behavior in resistive random access memories
(RRAMs) using atomic-layer-deposited Ga2O3/ZnO
composite film as the dielectric was investigated. By alternatively
atomic-layer-depositing Ga2O3 and ZnO with different
thickness, we can accurately control the oxygen vacancy concentration.
When regulating ZnO to ∼31%, the RRAMs exhibit a forming-free
property as well as outstanding performance, including the ratio of
a high resistance state to the low resistance state of 1000, retention
time of more than 1 × 104 s, and the endurance of
100. By preparing RRAMs of different Zn concentration, we carried
out a comparative study and explored the physical origin for the forming-free
property as well as good performance. Finally, a unified model is
proposed to account for the resistive switching and the current conduction
mechanism, providing meaningful insights in the development of high-quality
and forming-free RRAMs for future memory and neuromorphic applications.