posted on 2020-06-12, 17:36authored byChao Zhang, Marko Vehkamäki, Mika Pietikäinen, Markku Leskelä, Mikko Ritala
Novel
area-selective molecular layer deposition (AS-MLD) of polyimide
(PI) on Cu versus native SiO2 was studied. By use of 1,6-diaminohexane
(DAH) and pyromellitic dianhydride (PMDA) as precursors, PI films
can be selectively deposited on the Cu surface at 200–210 °C
with a rate around 7.8 Å/cycle while negligible growth takes
place on SiO2. The selectivity was successfully demonstrated
also on Cu/SiO2 patterns at 200 °C; after 180 MLD
cycles, around 140 nm thick PI was deposited on Cu regions while <10
nm thick PI was measured on SiO2 regions. By contrast,
at 170 °C, similar growth rates were measured on Cu (4 Å/cycle)
and native SiO2 (5 Å/cycle). To understand the origin
of the selectivity, properties of PI film grown on Cu at the selectivity
enabling temperature of 200 °C have been thoroughly compared
with those grown on both Cu and native SiO2 at the nonselective
temperature of 170 °C. Significant differences in crystallinity,
surface morphology, and chemical structure suggest that the PI films
grown on Cu at 200 °C have a novel crystalline interchain PI
structure. According to this finding, the selectivity mechanism is
proposed to derive from a new MLD reaction mechanism catalyzed by
copper ions at 200–210 °C that leads to the formation
of new crystalline polymer species. Additionally, it is suggested
that small amounts of Cu ions can float on the surface of the growing
PI film and thereby constantly catalyze the MLD reaction, as evidenced
by XRD, XPS, and ToF-ERDA. The high catalytic efficiency has been
also proven by using successfully an ultrathin Cu layer, nominally
0.1 nm, as a seed layer to initiate the MLD growth.