Alloying and Structure of Ultrathin Gallium Films on the (111) and (110) Surfaces of Palladium
2015-12-16T23:35:54Z (GMT) by
Growth, thermal stability, and structure of ultrathin gallium films on Pd(111) and Pd(110) are investigated by low-energy ion scattering and low-energy electron diffraction. Common to both surface orientations are growth of disordered Ga films at coverages of a few monolayers (T = 150 K), onset of alloy formation at low temperatures (T ≈ 200 K), and formation of a metastable, mostly disordered 1:1 surface alloy at temperatures around 400–500 K. At higher temperatures a Ga surface fraction of ∼0.3 is slightly stabilized on Pd(111), which we suggest to be related to the formation of Pd2Ga bulk-like films. While on Pd(110) only a Pd-up/Ga-down buckled surface was observed, an inversion of buckling was observed on Pd(111) upon heating. Similarities and differences to the related Zn/Pd system are discussed.