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Adjusting Interfacial Chemistry and Electronic Properties of Photovoltaics Based on a Highly Pure Sb2S3 Absorber by Atomic Layer Deposition
journal contribution
posted on 2019-12-10, 17:08 authored by Pascal Büttner, Florian Scheler, Craig Pointer, Dirk Döhler, Maïssa K.
S. Barr, Aleksandra Koroleva, Dmitrii Pankin, Ruriko Hatada, Stefan Flege, Alina Manshina, Elizabeth R. Young, Ignacio Mínguez-Bacho, Julien BachmannThe combination of oxide and heavier chalcogenide layers
in thin film photovoltaics suffers limitations associated with oxygen
incorporation and sulfur deficiency in the chalcogenide layer or with
a chemical incompatibility which results in dewetting issues and defect
states at the interface. Here, we establish atomic layer deposition
(ALD) as a tool to overcome these limitations. ALD allows one to obtain
highly pure Sb2S3 light absorber layers, and
we exploit this technique to generate an additional interfacial layer
consisting of 1.5 nm ZnS. This ultrathin layer simultaneously resolves
dewetting and passivates defect states at the interface. We demonstrate
via transient absorption spectroscopy that interfacial electron recombination
is one order of magnitude slower at the ZnS-engineered interface than
hole recombination at the Sb2S3/P3HT interface.
The comparison of solar cells with and without oxide incorporation
in Sb2S3, with and without the ultrathin ZnS
interlayer, and with systematically varied Sb2S3 thickness provides a complete picture of the physical processes
at work in the devices.
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1.5 nm ZnSAtomic Layer Depositionultrathin layerlayer depositionoxide incorporationInterfacial ChemistryPure Sb 2 S 3 Absorberabsorption spectroscopyfilm photovoltaicsdewetting issueschalcogenide layersoxygen incorporationsulfur deficiencyElectronic PropertiesSb 2 S 3 light absorber layersSb 2 S 3 thicknessZnS-engineered interfacepassivates defect stateselectron recombinationultrathin ZnS interlayerALDSb 2 S 33HTchemical incompatibilitydefect stateshole recombinationchalcogenide layer
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