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A Humid-Air-Operable, NO2‑Responsive Polymer Transistor Series Circuit with Improved Signal-to-Drift Ratio Based on Polymer Semiconductor Oxidation
journal contribution
posted on 2019-12-12, 18:08 authored by Huidong Fan, Hui Li, Jinfeng Han, Nathaniel McKeever, Junsheng Yu, Howard E. KatzA subparts per million-sensitive nitrogen dioxide (NO2) sensing circuit with improved humid air stability was realized
incorporating UV-ozone treatment on a poly(bisdodecylquaterthiophene)/polystyrene
blend film. The circuit consisted of a pair of organic field-effect
transistors (OFETs) in series, one OFET with and one without this
treatment. In contrast to most previous OFET sensors, the readout
was obtained from the voltage Vout at
a point between the OFETs. The circuit showed a low detection limit
(200 ppb) toward NO2 and greatly reduced the voltage drift
in the humid environment compared to the current drift of the circuit
or the individual OFETs because of the balance of conductance drifts
on either side of the readout point, which differs from the existing
OFET-based sensors. By using Vout as the
detection parameter, the sensitivity of the circuit approaches 25
and 400% for NO2 concentrations of 200 ppb and 20 ppm,
respectively. Moreover, the Vout is substantial
enough to be easily measured by a voltmeter, which could remove the
need for complex equipment (semiconductor analyzer system) for the
sensing test. We thus demonstrate a simplified approach to stabilized
OFET circuits that could be used in printable, flexible, or wearable
sensors.
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wearable sensorsSignal-to-Drift Ratioreadout pointvoltage Vdetection parametercircuit approaches 25million-sensitive nitrogen dioxidefield-effect transistorsOFET circuitsOFET sensors2 concentrations200 ppb20 ppmair stabilityUV-ozone treatmentPolymer Semiconductor OxidationOFET-based sensorsvoltage driftsemiconductor analyzer system
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