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A Graphene-Based Hot Electron Transistor
journal contribution
posted on 2015-12-16, 22:39 authored by Sam Vaziri, Grzegorz Lupina, Christoph Henkel, Anderson
D. Smith, Mikael Östling, Jarek Dabrowski, Gunther Lippert, Wolfgang Mehr, Max C. LemmeWe
experimentally demonstrate DC functionality of graphene-based
hot electron transistors, which we call graphene base transistors
(GBT). The fabrication scheme is potentially compatible with silicon
technology and can be carried out at the wafer scale with standard
silicon technology. The state of the GBTs can be switched by a potential
applied to the transistor base, which is made of graphene. Transfer
characteristics of the GBTs show ON/OFF current ratios exceeding 104.
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