Few-Layer MoS<sub>2</sub>/a-Si:H Heterojunction Pin-Photodiodes for Extended Infrared Detection Andreas Bablich Daniel S. Schneider Paul Kienitz Satender Kataria Stefan Wagner Chanyoung Yim Niall McEvoy Olof Engstrom Julian Müller Yilmaz Sakalli Benjamin Butz Georg S. Duesberg Peter Haring Bolívar Max C. Lemme 10.1021/acsphotonics.9b00337.s008 https://acs.figshare.com/articles/journal_contribution/Few-Layer_MoS_sub_2_sub_a-Si_H_Heterojunction_Pin-Photodiodes_for_Extended_Infrared_Detection/8132537 Few-layer molybdenum disulfide (FL-MoS<sub>2</sub>) films have been integrated into amorphous silicon (a-Si:H) pin-photodetectors. To achieve this, vertical a-Si:H photodiodes were grown by plasma-enhanced chemical vapor deposition (PE-CVD) on top of large-scale synthesized and transferred homogeneous FL-MoS<sub>2</sub>. This novel detector array exhibits long-term stability (more than six month) and outperforms conventional silicon-based pin-photodetectors in the infrared range (IR, λ = 2120 nm) in terms of sensitivities by up to ∼50 mAW<sup>–1</sup>. Photodetectivities of up to ∼2 × 10<sup>10</sup> Jones and external quantum efficiencies of ∼3% are achieved. The detectors further feature the additional functionality of bias-dependent responsivity switching between the different spectral ranges. The realization of such scalable detector arrays is an essential step toward pixelated and wavelength-selective sensors operating in the IR spectral range. 2019-05-13 00:00:00 a-Si scalable detector arrays FL-MoS 2 Detection Few-layer molybdenum disulfide pin-photodetector plasma-enhanced chemical vapor deposition IR novel detector array exhibits PE-CVD