Few-Layer MoS<sub>2</sub>/a-Si:H Heterojunction Pin-Photodiodes
for Extended Infrared Detection
Andreas Bablich
Daniel S. Schneider
Paul Kienitz
Satender Kataria
Stefan Wagner
Chanyoung Yim
Niall McEvoy
Olof Engstrom
Julian Müller
Yilmaz Sakalli
Benjamin Butz
Georg S. Duesberg
Peter Haring Bolívar
Max C. Lemme
10.1021/acsphotonics.9b00337.s008
https://acs.figshare.com/articles/journal_contribution/Few-Layer_MoS_sub_2_sub_a-Si_H_Heterojunction_Pin-Photodiodes_for_Extended_Infrared_Detection/8132537
Few-layer molybdenum disulfide (FL-MoS<sub>2</sub>) films have
been integrated into amorphous silicon (a-Si:H) pin-photodetectors.
To achieve this, vertical a-Si:H photodiodes were grown by plasma-enhanced
chemical vapor deposition (PE-CVD) on top of large-scale synthesized
and transferred homogeneous FL-MoS<sub>2</sub>. This novel detector
array exhibits long-term stability (more than six month) and outperforms
conventional silicon-based pin-photodetectors in the infrared range
(IR, λ = 2120 nm) in terms of sensitivities by up to ∼50
mAW<sup>–1</sup>. Photodetectivities of up to ∼2 ×
10<sup>10</sup> Jones and external quantum efficiencies of ∼3%
are achieved. The detectors further feature the additional functionality
of bias-dependent responsivity switching between the different spectral
ranges. The realization of such scalable detector arrays is an essential
step toward pixelated and wavelength-selective sensors operating in
the IR spectral range.
2019-05-13 00:00:00
a-Si
scalable detector arrays
FL-MoS 2
Detection Few-layer molybdenum disulfide
pin-photodetector
plasma-enhanced chemical vapor deposition
IR
novel detector array exhibits
PE-CVD