10.1021/acsphotonics.9b00337.s005 Andreas Bablich Andreas Bablich Daniel S. Schneider Daniel S. Schneider Paul Kienitz Paul Kienitz Satender Kataria Satender Kataria Stefan Wagner Stefan Wagner Chanyoung Yim Chanyoung Yim Niall McEvoy Niall McEvoy Olof Engstrom Olof Engstrom Julian Müller Julian Müller Yilmaz Sakalli Yilmaz Sakalli Benjamin Butz Benjamin Butz Georg S. Duesberg Georg S. Duesberg Peter Haring Bolívar Peter Haring Bolívar Max C. Lemme Max C. Lemme Few-Layer MoS<sub>2</sub>/a-Si:H Heterojunction Pin-Photodiodes for Extended Infrared Detection American Chemical Society 2019 a-Si scalable detector arrays FL-MoS 2 Detection Few-layer molybdenum disulfide pin-photodetector plasma-enhanced chemical vapor deposition IR novel detector array exhibits PE-CVD 2019-05-13 00:00:00 Journal contribution https://acs.figshare.com/articles/journal_contribution/Few-Layer_MoS_sub_2_sub_a-Si_H_Heterojunction_Pin-Photodiodes_for_Extended_Infrared_Detection/8132528 Few-layer molybdenum disulfide (FL-MoS<sub>2</sub>) films have been integrated into amorphous silicon (a-Si:H) pin-photodetectors. To achieve this, vertical a-Si:H photodiodes were grown by plasma-enhanced chemical vapor deposition (PE-CVD) on top of large-scale synthesized and transferred homogeneous FL-MoS<sub>2</sub>. This novel detector array exhibits long-term stability (more than six month) and outperforms conventional silicon-based pin-photodetectors in the infrared range (IR, λ = 2120 nm) in terms of sensitivities by up to ∼50 mAW<sup>–1</sup>. Photodetectivities of up to ∼2 × 10<sup>10</sup> Jones and external quantum efficiencies of ∼3% are achieved. The detectors further feature the additional functionality of bias-dependent responsivity switching between the different spectral ranges. The realization of such scalable detector arrays is an essential step toward pixelated and wavelength-selective sensors operating in the IR spectral range.