%0 Journal Article %A Zhu, Tao %A Zheng, Luyao %A Yao, Xiang %A Liu, Lei %A Huang, Fei %A Cao, Yong %A Gong, Xiong %D 2019 %T Ultrasensitive Solution-Processed Broadband PbSe Photodetectors through Photomultiplication Effect %U https://acs.figshare.com/articles/journal_contribution/Ultrasensitive_Solution-Processed_Broadband_PbSe_Photodetectors_through_Photomultiplication_Effect/7739615 %R 10.1021/acsami.8b21966.s001 %2 https://acs.figshare.com/ndownloader/files/14400626 %K PbSe quantum dots %K hole injection resistance %K Ultrasensitive Solution-Processed Broadband PbSe Photodetectors %K EQE %K 2500 nm %K hole-trap-assisted photomultiplication effect %K photoinduced self-doping process %K PbSe QD-based photodetectors %K room-temperature-operated solution-processed broadband photodetectors %K quantum efficiency %K PbSe QD-based photodetectors exhibit %K Photomultiplication Effect Broadband photodetectors %K EDT-PbSe QDs %K TABI-PbSe QDs %K report room-temperature-operated solution-processed photodetectors %K electron extraction layer %K room temperature %X Broadband photodetectors have important applications in both scientific and industrial sectors. In this study, we report room-temperature-operated solution-processed photodetectors by PbSe quantum dots (QDs) with spectral response from 350 to 2500 nm. In order to boost both external quantum efficiency (EQE) and projected detectivity (D*), the hole-trap-assisted photomultiplication effect through the EDT-PbSe QD/TABI PbSe QD double-thin-layer thin film, where EDT-PbSe QDs are 1,2-ethanedithiol (EDT)-capped PbSe QDs and TABI-PbSe QDs are tetrabutylammonium (TABI)-capped PbSe QDs, is applied. To further enhance D*, a thin layer of the conjugated polyelectrolyte, which offers significant hole injection resistance for suppressing dark current but enhancing photocurrent under illumination due to the photoinduced self-doping process, is applied for reengineering the electron extraction layer in PbSe QD-based photodetectors. As a result, at room temperature, PbSe QD-based photodetectors exhibit over 450% EQE and over ∼1012 Jones D* in the visible region and over 120% EQE and D* ∼4 × 1011 Jones in the infrared region. These results demonstrate that our studies provide a simple approach to realize room-temperature-operated solution-processed broadband photodetectors. %I ACS Publications