%0 Journal Article
%A Zhu, Tao
%A Zheng, Luyao
%A Yao, Xiang
%A Liu, Lei
%A Huang, Fei
%A Cao, Yong
%A Gong, Xiong
%D 2019
%T Ultrasensitive
Solution-Processed Broadband PbSe Photodetectors
through Photomultiplication Effect
%U https://acs.figshare.com/articles/journal_contribution/Ultrasensitive_Solution-Processed_Broadband_PbSe_Photodetectors_through_Photomultiplication_Effect/7739615
%R 10.1021/acsami.8b21966.s001
%2 https://acs.figshare.com/ndownloader/files/14400626
%K PbSe quantum dots
%K hole injection resistance
%K Ultrasensitive Solution-Processed Broadband PbSe Photodetectors
%K EQE
%K 2500 nm
%K hole-trap-assisted photomultiplication effect
%K photoinduced self-doping process
%K PbSe QD-based photodetectors
%K room-temperature-operated solution-processed broadband photodetectors
%K quantum efficiency
%K PbSe QD-based photodetectors exhibit
%K Photomultiplication Effect Broadband photodetectors
%K EDT-PbSe QDs
%K TABI-PbSe QDs
%K report room-temperature-operated solution-processed photodetectors
%K electron extraction layer
%K room temperature
%X Broadband photodetectors
have important applications in both scientific
and industrial sectors. In this study, we report room-temperature-operated
solution-processed photodetectors by PbSe quantum dots (QDs) with
spectral response from 350 to 2500 nm. In order to boost both external
quantum efficiency (EQE) and projected detectivity (D*), the hole-trap-assisted photomultiplication effect through the
EDT-PbSe QD/TABI PbSe QD double-thin-layer thin film, where EDT-PbSe
QDs are 1,2-ethanedithiol (EDT)-capped PbSe QDs and TABI-PbSe QDs
are tetrabutylammonium (TABI)-capped PbSe QDs, is applied. To further
enhance D*, a thin layer of the conjugated polyelectrolyte,
which offers significant hole injection resistance for suppressing
dark current but enhancing photocurrent under illumination due to
the photoinduced self-doping process, is applied for reengineering
the electron extraction layer in PbSe QD-based photodetectors. As
a result, at room temperature, PbSe QD-based photodetectors exhibit
over 450% EQE and over ∼1012 Jones D* in the visible region and over 120% EQE and D*
∼4 × 1011 Jones in the infrared region. These
results demonstrate that our studies provide a simple approach to
realize room-temperature-operated solution-processed broadband photodetectors.
%I ACS Publications