10.1021/acsaelm.8b00015.s001
Dun Mao
Dun
Mao
Thomas Kananen
Thomas
Kananen
Tiantian Li
Tiantian
Li
Anishkumar Soman
Anishkumar
Soman
Jeffrey Sinsky
Jeffrey
Sinsky
Nicholas Petrone
Nicholas
Petrone
James Hone
James
Hone
Po Dong
Po
Dong
Tingyi Gu
Tingyi
Gu
Bandwidth Limitation of Directly Contacted Graphene–Silicon
Optoelectronics
American Chemical Society
2019
multijunction structure
small-signal model
silicon homojunction
Electrostatic carrier distribution
CMOS
junction formation
metal-oxide-semiconductor transistor
low-bandgap materials
device dimensions
sub-terahertz bandwidth operation
silicon nanophotonic devices
Schottky barriers
RF response
carrier injection rates
Bandwidth Limitation
multicomponent interface
silicon p-i-n junction
optoelectronic devices
radio frequency response
2019-01-22 00:00:00
Journal contribution
https://acs.figshare.com/articles/journal_contribution/Bandwidth_Limitation_of_Directly_Contacted_Graphene_Silicon_Optoelectronics/7689710
Electrically contacting
layered materials on a complementary metal-oxide-semiconductor transistor
(CMOS)-processed lateral silicon homojunction offers a new platform
enabling postfabrication-free high-speed hybrid optoelectronic devices
on chip. Understanding detailed junction formation and radiofrequency
(RF) response on the multicomponent interface between directly contacted
silicon nanophotonic devices and low-bandgap materials is essential
for predicting the performance of those active components. Electrostatic
carrier distribution as well as the dynamics of externally injected
carriers are strongly influenced by spatially varying Schottky barriers
on the vertical heterojunctions. In this work, we analyze the high-speed
RF response of a graphene “bonded” lateral silicon p-i-n
junction. The multijunction structure on the hybrid structure is parametrized
by fitting a small-signal model to the broadband coherent radio frequency
response of the hybrid device at a series of different carrier injection
rates. By engineering the device dimensions, it is possible to suppress
the resistance–capacitance delay to be less than a picosecond
and enable sub-terahertz bandwidth operation.