10.1021/acsaelm.8b00015.s001 Dun Mao Dun Mao Thomas Kananen Thomas Kananen Tiantian Li Tiantian Li Anishkumar Soman Anishkumar Soman Jeffrey Sinsky Jeffrey Sinsky Nicholas Petrone Nicholas Petrone James Hone James Hone Po Dong Po Dong Tingyi Gu Tingyi Gu Bandwidth Limitation of Directly Contacted Graphene–Silicon Optoelectronics American Chemical Society 2019 multijunction structure small-signal model silicon homojunction Electrostatic carrier distribution CMOS junction formation metal-oxide-semiconductor transistor low-bandgap materials device dimensions sub-terahertz bandwidth operation silicon nanophotonic devices Schottky barriers RF response carrier injection rates Bandwidth Limitation multicomponent interface silicon p-i-n junction optoelectronic devices radio frequency response 2019-01-22 00:00:00 Journal contribution https://acs.figshare.com/articles/journal_contribution/Bandwidth_Limitation_of_Directly_Contacted_Graphene_Silicon_Optoelectronics/7689710 Electrically contacting layered materials on a complementary metal-oxide-semiconductor transistor (CMOS)-processed lateral silicon homojunction offers a new platform enabling postfabrication-free high-speed hybrid optoelectronic devices on chip. Understanding detailed junction formation and radiofrequency (RF) response on the multicomponent interface between directly contacted silicon nanophotonic devices and low-bandgap materials is essential for predicting the performance of those active components. Electrostatic carrier distribution as well as the dynamics of externally injected carriers are strongly influenced by spatially varying Schottky barriers on the vertical heterojunctions. In this work, we analyze the high-speed RF response of a graphene “bonded” lateral silicon p-i-n junction. The multijunction structure on the hybrid structure is parametrized by fitting a small-signal model to the broadband coherent radio frequency response of the hybrid device at a series of different carrier injection rates. By engineering the device dimensions, it is possible to suppress the resistance–capacitance delay to be less than a picosecond and enable sub-terahertz bandwidth operation.