Wafer Scale Growth and Characterization of Edge Specific
Graphene Nanoribbons for Nanoelectronics
Alexei A. Zakharov
Nikolay A. Vinogradov
Johannes Aprojanz
Thi Thuy Nhung Nguyen
Christoph Tegenkamp
Claudia Struzzi
Tihomir Iakimov
Rositsa Yakimova
Valdas Jokubavicius
10.1021/acsanm.8b01780.s001
https://acs.figshare.com/articles/journal_contribution/Wafer_Scale_Growth_and_Characterization_of_Edge_Specific_Graphene_Nanoribbons_for_Nanoelectronics/7539710
One of the ways to
use graphene in field effect transistors is
to introduce a band gap by quantum confinement effect. That is why
narrow graphene nanoribbons (GNRs) with width less than 50 nm are
considered to be essential components in future graphene electronics.
The growth of graphene on sidewalls of SiC(0001) mesa structures using
scalable photolithography was shown to produce high quality GNRs with
excellent transport properties. Such epitaxial graphene nanoribbons
are very important in fundamental science but if GNRs are supposed
to be used in advanced nanoelectronics, high quality thin (<50
nm) nanoribbons should be produced on a large (wafer) scale. Here
we present a technique for scalable template growth of high quality
GNRs on Si-face of SiC(0001) and provide detailed structural information
along with transport properties. For the first time we succeeded now
to avoid SiC-facet instabilities in order to grow high quality GNRs
along both [11̅00] and [112̅0] crystallographic directions
on the same substrate. The quality of the grown nanoribbons was confirmed
by comprehensive characterization with atomic resolution STM, dark
field LEEM, and transport measurements. This approach generates an
entirely new platform for both fundamental and application driven
research of quasi one-dimensional carbon based magnetism and spintronics.
2018-12-21 00:00:00
quality GNRs
Wafer Scale Growth
future graphene electronics
scalable template growth
field effect transistors
nm
Such epitaxial graphene nanoribbons
SiC
quantum confinement effect
STM
transport properties
LEEM