10.1021/acsami.8b08658.s001
Fayin Zhang
Fayin
Zhang
Shanyi Guang
Shanyi
Guang
Meidan Ye
Meidan
Ye
Kaibing Xu
Kaibing
Xu
Wenxi Guo
Wenxi
Guo
Xiangyang Liu
Xiangyang
Liu
Hongyao Xu
Hongyao
Xu
Chemical
Decoration of Perovskites by Nickel Oxide
Doping for Efficient and Stable Perovskite Solar Cells
American Chemical Society
2018
p-type charge transport material decoration method
PbI
NiO x
power conversion efficiency
PCE
Nickel Oxide Doping
perovskite films
photo-generated carrier lifetime
NH
Stable Perovskite Solar Cells Crystal engineering
CH
Cl
photo-generated charge transport
crystal
chemical
p-type semiconductor materials
2018-10-09 00:00:00
Journal contribution
https://acs.figshare.com/articles/journal_contribution/Chemical_Decoration_of_Perovskites_by_Nickel_Oxide_Doping_for_Efficient_and_Stable_Perovskite_Solar_Cells/7215212
Crystal
engineering of CH<sub>3</sub>NH<sub>3</sub>PbI<sub>3–<i>x</i></sub>Cl<i><sub>x</sub></i> perovskite films
through modification by decoration with p-type semiconductor materials
was proposed as an efficient method for obtaining good-quality crystalline
films. A simple method is demonstrated to improve the quality of perovskite
films by adding nickel oxide (NiO<i><sub>x</sub></i>) nanoparticles
into the precursor solution. The addition of NiO<i><sub>x</sub></i> brings about high-quality crystals and convenient photo-generated
charge transport with reduced defect density owing to efficient control
of the preferred nucleation and crystal growth. The sufficient contact
between CH<sub>3</sub>NH<sub>3</sub>PbI<sub>3–<i>x</i></sub>Cl<i><sub>x</sub></i>–NiO<i><sub>x</sub></i> and the electron-transport layer can contribute to photo-generated
carrier lifetime and transport through the optimized interface. Moreover,
it is demonstrated that a strong chemical bonding interaction between
MAPbI<sub>3–<i>x</i></sub>Cl<i><sub>x</sub></i> and NiO<i><sub>x</sub></i> could protect perovskite materials
from oxygen and humidity corrosion, showing remarkable stability holding
∼81% of the initial power conversion efficiency (PCE) after
50 days. The device with the best PCE of 19.34% is achieved because
of the improved short-circuit current from 22.23 to 23.01 mA cm<sup>–2</sup> and fill factor from 68.97 to 75.06%. The results
certify that this p-type charge transport material decoration method
for the optimization of perovskite films is an efficient way to optimize
the performance.