Molecular-Beam Epitaxy of Two-Dimensional In<sub>2</sub>Se<sub>3</sub> and Its Giant Electroresistance Switching in Ferroresistive
Memory Junction
Sock Mui Poh
Sherman Jun Rong Tan
Han Wang
Peng Song
Irfan H. Abidi
Xiaoxu Zhao
Jiadong Dan
Jingsheng Chen
Zhengtang Luo
Stephen J. Pennycook
Antonio H. Castro Neto
Kian Ping Loh
10.1021/acs.nanolett.8b02688.s001
https://acs.figshare.com/articles/journal_contribution/Molecular-Beam_Epitaxy_of_Two-Dimensional_In_sub_2_sub_Se_sub_3_sub_and_Its_Giant_Electroresistance_Switching_in_Ferroresistive_Memory_Junction/7074743
Ferroelectric thin
film has attracted great interest for nonvolatile
memory applications and can be used in either ferroelectric Schottky
diodes or ferroelectric tunneling junctions due to its promise of
fast switching speed, high on-to-off ratio, and nondestructive readout.
Two-dimensional α-phase indium selenide (In<sub>2</sub>Se<sub>3</sub>), which has a modest band gap and robust ferroelectric properties
stabilized by dipole locking, is an excellent candidate for multidirectional
piezoelectric and switchable photodiode applications. However, the
large-scale synthesis of this material is still elusive, and its performance
as a ferroresistive memory junction is rarely reported. Here, we report
the low-temperature molecular-beam epitaxy (MBE) of large-area monolayer
α-In<sub>2</sub>Se<sub>3</sub> on graphene and demonstrate the
use of α-In<sub>2</sub>Se<sub>3</sub> on graphene in ferroelectric
Schottky diode junctions by employing high-work-function gold as the
top electrode. The polarization-modulated Schottky barrier formed
at the interface exhibits a giant electroresistance ratio of 3.9 ×
10<sup>6</sup> with a readout current density of >12 A/cm<sup>2</sup>, which is more than 200% higher than the state-of-the-art technology.
Our MBE growth method allows a high-quality ultrathin film of In<sub>2</sub>Se<sub>3</sub> to be heteroepitaxially grown on graphene,
thereby simplifying the fabrication of high-performance 2D ferroelectric
junctions for ferroresistive memory applications.
2018-09-07 00:00:00
band gap
high-work-function gold
Schottky diode junctions
ultrathin film
Giant Electroresistance Switching
Schottky diodes
readout
2 D
2 Se 3
ferroresistive memory junction
Ferroresistive Memory Junction Ferroelectric
polarization-modulated Schottky barrier
ferroresistive memory applications
interface exhibits
MBE growth method
Two-dimensional α- phase indium selenide
giant electroresistance ratio
monolayer α-
molecular-beam epitaxy
on-to-off ratio
graphene
switchable photodiode applications
tunneling junctions
nonvolatile memory applications
Molecular-Beam Epitaxy