%0 Journal Article %A Suo, Bingbing %A Lian, Yongqin %A Zou, Wenli %A Lei, Yibo %D 2018 %T Electronic Structure of OsSi Calculated by MS-NEVPT2 with Inclusion of the Relativistic Effects %U https://acs.figshare.com/articles/journal_contribution/Electronic_Structure_of_OsSi_Calculated_by_MS-NEVPT2_with_Inclusion_of_the_Relativistic_Effects/6450254 %R 10.1021/acs.jpca.8b00825.s001 %2 https://acs.figshare.com/ndownloader/files/11864132 %K future experiments %K oscillator strengths %K cm %K reference data %K Relativistic Effects %K all-electron basis sets %K X 3 Σ 0 %K MS-NEVPT 2 %K 3 Π 1 %K Electronic Structure %K ground state %K order perturbation theory %K N-electron valence state %K oscillator strength %K latter transition energy %K II %K equilibrium bond length 2.103 Å %K 2.1207 Å %X The electronic states of OsSi are calculated by multi-state N-electron valence state second order perturbation theory (MS-NEVPT2) with all-electron basis sets. The relativistic effects are considered comprehensively that allows us to identify the X3Σ0+ ground state. The theoretical equilibrium bond length 2.103 Å is close to the experimental measurement of 2.1207 Å while the vibrational frequency 466 cm–1 is smaller than the experimental value of 516 cm–1. Two excited states, namely 3Π1(I) and 3Π1(II), are located at 15568 and 18316 cm–1 above the ground state, respectively. The 3Π1(I) ← X3Σ0+ transition has been assigned to the experimental spectra at 15729 cm–1 and 3Π1(II) ← X3Σ0+ may produce the bands near 18469 cm–1. Although the latter transition energy is in accord with the experimental spectra, theoretical calculations give too small oscillator strength. Moreover, plenty of excited states with considerable oscillator strengths are located that could serve as reference data in future experiments. The four low-lying states of OsC are also calculated for comparison. %I ACS Publications