10.1021/acs.nanolett.7b04666.s001 Hiske Overweg Hiske Overweg Hannah Eggimann Hannah Eggimann Xi Chen Xi Chen Sergey Slizovskiy Sergey Slizovskiy Marius Eich Marius Eich Riccardo Pisoni Riccardo Pisoni Yongjin Lee Yongjin Lee Peter Rickhaus Peter Rickhaus Kenji Watanabe Kenji Watanabe Takashi Taniguchi Takashi Taniguchi Vladimir Fal’ko Vladimir Fal’ko Thomas Ihn Thomas Ihn Klaus Ensslin Klaus Ensslin Electrostatically Induced Quantum Point Contacts in Bilayer Graphene American Chemical Society 2017 Δ G Ω. charge carrier density device-dependent conductance quantization Unexpected mode crossings split gate devices encapsulated bilayer graphene Electrostatically Induced Quantum Point Contacts quantum Hall regime Landau level degeneracy 2017-12-29 16:13:44 Journal contribution https://acs.figshare.com/articles/journal_contribution/Electrostatically_Induced_Quantum_Point_Contacts_in_Bilayer_Graphene/5743599 We report the fabrication of electrostatically defined nanostructures in encapsulated bilayer graphene, with leakage resistances below depletion gates as high as <i>R</i> ∼ 10 GΩ. This exceeds previously reported values of <i>R</i> = 10–100 kΩ.− We attribute this improvement to the use of a graphite back gate. We realize two split gate devices which define an electronic channel on the scale of the Fermi-wavelength. A channel gate covering the gap between the split gates varies the charge carrier density in the channel. We observe device-dependent conductance quantization of Δ<i>G</i> = 2<i>e</i><sup>2</sup>/<i>h</i> and Δ<i>G</i> = 4<i>e</i><sup>2</sup>/<i>h</i>. In quantizing magnetic fields normal to the sample plane, we recover the four-fold Landau level degeneracy of bilayer graphene. Unexpected mode crossings appear at the crossover between zero magnetic field and the quantum Hall regime.