Low
Variability in Synthetic Monolayer MoS<sub>2</sub> Devices
Kirby
K. H. Smithe
Saurabh V. Suryavanshi
Miguel Muñoz Rojo
Aria D. Tedjarati
Eric Pop
10.1021/acsnano.7b04100.s001
https://acs.figshare.com/articles/journal_contribution/Low_Variability_in_Synthetic_Monolayer_MoS_sub_2_sub_Devices/5244520
Despite
much interest in applications of two-dimensional (2D) fabrics
such as MoS<sub>2</sub>, to date most studies have focused on single
or few devices. Here we examine the variability of hundreds of transistors
from monolayer MoS<sub>2</sub> synthesized by chemical vapor deposition.
Ultraclean fabrication yields low surface roughness of ∼3 Å
and surprisingly low variability of key device parameters, considering
the atomically thin nature of the material. Threshold voltage variation
and very low hysteresis suggest variations in charge density and traps
as low as ∼10<sup>11</sup> cm<sup>−2</sup>. Three extraction
methods (field-effect, Y-function, and effective mobility) independently
reveal mobility from 30 to 45 cm<sup>2</sup>/V/s (10th to 90th percentile;
highest value ∼48 cm<sup>2</sup>/V/s) across areas >1 cm<sup>2</sup>. Electrical properties are remarkably immune to the presence
of bilayer regions, which cause only small conduction band offsets
(∼55 meV) measured by scanning Kelvin probe microscopy, an
order of magnitude lower than energy variations in Si films of comparable
thickness. Data are also used as inputs to Monte Carlo circuit simulations
to understand the effects of material variability on circuit variation.
These advances address key missing steps required to scale 2D semiconductors
into functional systems.
2017-07-11 00:00:00
energy variations
Ultraclean fabrication yields
bilayer regions
Synthetic Monolayer MoS 2 Devices
monolayer MoS 2
advances address
Monte Carlo circuit simulations
conduction band
Low Variability
MoS 2
Electrical properties
scanning Kelvin probe microscopy
material variability
cm
mobility
charge density
device parameters
Si films
scale 2 D semiconductors
surface roughness
circuit variation
chemical vapor deposition
threshold voltage variation
extraction methods