Observation of Room-Temperature Magnetoresistance in Monolayer MoS<sub>2</sub> by Ferromagnetic Gating JieWenjing YangZhibin ZhangFan BaiGongxun LeungChi Wah HaoJianhua 2017 Room-temperature magnetoresistance (MR) effect is observed in heterostructures of wafer-scale MoS<sub>2</sub> layers and ferromagnetic dielectric CoFe<sub>2</sub>O<sub>4</sub> (CFO) thin films. Through the ferromagnetic gating, an MR ratio of −12.7% is experimentally achieved in monolayer MoS<sub>2</sub> under 90 kOe magnetic field at room temperature (RT). The observed MR ratio is much higher than that in previously reported nonmagnetic metal coupled with ferromagnetic insulator, which generally exhibited MR ratio of less than 1%. The enhanced MR is attributed to the spin accumulation at the heterostructure interface and spin injection to the MoS<sub>2</sub> layers by the strong spin–orbit coupling effect. The injected spin can contribute to the spin current and give rise to the MR by changing the resistance of MoS<sub>2</sub> layers. Furthermore, the MR effect decreases as the thickness of MoS<sub>2</sub> increases, and the MR ratio becomes negligible in MoS<sub>2</sub> with thickness more than 10 layers. Besides, it is interesting to find a magnetic field direction dependent spin Hall magnetoresistance that stems from a combination of the spin Hall and the inverse spin Hall effects. Our research provides an insight into exploring RT MR in monolayer materials, which should be helpful for developing ultrathin magnetic storage devices in the atomically thin limit.