Role of Trimethylaluminum in Low Temperature Atomic
Layer Deposition of Silicon Nitride
Aaron Dangerfield
Charith E. Nanayakkara
Anupama Mallikarjunan
Xinjian Lei
Ronald M. Pearlstein
Agnes Derecskei-Kovacs
Jeremy Cure
Alain Estève
Yves J. Chabal
10.1021/acs.chemmater.7b01816.s001
https://acs.figshare.com/articles/journal_contribution/Role_of_Trimethylaluminum_in_Low_Temperature_Atomic_Layer_Deposition_of_Silicon_Nitride/5193235
Aminosilanes
are attractive precursors for atomic layer deposition
of silicon oxides and nitrides because they are halide-free and more
reactive than chlorosilanes. However, the deposition of silicon nitride
on oxide substrates still requires relatively high temperatures. We
show here that for a process involving di<i>sec</i>-butylaminosilane
and hydrazine, the insertion of Al from trimethyl aluminum allows
the deposition of silicon nitride films at relatively low temperatures
(250 °C). First-principles calculations reveal that the presence
of Al increases the binding of molecular hydrazine, thereby effectively
enhancing the reactivity of hydrazine with the silicon precursor during
the atomic layer deposition process, which leads to nitrogen incorporation
into silicon. However, the range of this enhancement is limited to ∼1
nm, requiring additional trimethylaluminum exposures to continue the
Si<sub>3</sub>N<sub>4</sub> deposition.
2017-06-27 00:00:00
silicon precursor
hydrazine
Silicon Nitride Aminosilanes
Al increases
silicon oxides
layer deposition process
layer deposition
di sec
oxide substrates
Si 3 N 4 deposition
silicon nitride films
First-principles calculations
trimethylaluminum exposures
nitrogen incorporation
silicon nitride
Low Temperature Atomic Layer Deposition
trimethyl aluminum