10.1021/acs.cgd.7b00107.s001
Dong Yeong Kim
Dong Yeong
Kim
Nam Han
Nam
Han
Hokyeong Jeong
Hokyeong
Jeong
Jaewon Kim
Jaewon
Kim
Sunyong Hwang
Sunyong
Hwang
Kyung Song
Kyung
Song
Si-Young Choi
Si-Young
Choi
Jong Kyu Kim
Jong Kyu
Kim
Pressure-Dependent Growth of Wafer-Scale Few-layer
h‑BN by Metal–Organic Chemical Vapor Deposition
American Chemical Society
2017
wafer-scale thickness uniformity
MOCVD-grown h-BN films
reactor pressure
near-edge X-ray absorption
multiwafer-scale uniformity h-BN films
transmission electron microscopy
2017-03-22 00:00:00
Journal contribution
https://acs.figshare.com/articles/journal_contribution/Pressure-Dependent_Growth_of_Wafer-Scale_Few-layer_h_BN_by_Metal_Organic_Chemical_Vapor_Deposition/4805581
A few-layer
hexagonal boron nitride (h-BN) films with wafer-scale
thickness uniformity were grown by using a multiwafer metal–organic
chemical vapor deposition (MOCVD) system at relatively low temperature
of 1050 °C under various reactor pressures. The effect of the
reactor pressure on the structural properties of the h-BN films was
systematically investigated by various spectroscopic and microscopic
analysis tools including near-edge X-ray absorption fine structure
spectroscopy and transmission electron microscopy. We found that the
defects in the MOCVD-grown h-BN films such as nitrogen vacancies and
grain boundaries were strongly affected by the reactor pressure, which
was elucidated by pressure-dependent change of Gibbs free energy for
the nuclei formation and reaction rates. Based on our experimental
observations, the growth strategies were discussed for realization
of high-quality, multiwafer-scale uniformity h-BN films grown by MOCVD
at temperature of 1050 °C.