10.1021/acs.cgd.7b00107.s001 Dong Yeong Kim Dong Yeong Kim Nam Han Nam Han Hokyeong Jeong Hokyeong Jeong Jaewon Kim Jaewon Kim Sunyong Hwang Sunyong Hwang Kyung Song Kyung Song Si-Young Choi Si-Young Choi Jong Kyu Kim Jong Kyu Kim Pressure-Dependent Growth of Wafer-Scale Few-layer h‑BN by Metal–Organic Chemical Vapor Deposition American Chemical Society 2017 wafer-scale thickness uniformity MOCVD-grown h-BN films reactor pressure near-edge X-ray absorption multiwafer-scale uniformity h-BN films transmission electron microscopy 2017-03-22 00:00:00 Journal contribution https://acs.figshare.com/articles/journal_contribution/Pressure-Dependent_Growth_of_Wafer-Scale_Few-layer_h_BN_by_Metal_Organic_Chemical_Vapor_Deposition/4805581 A few-layer hexagonal boron nitride (h-BN) films with wafer-scale thickness uniformity were grown by using a multiwafer metal–organic chemical vapor deposition (MOCVD) system at relatively low temperature of 1050 °C under various reactor pressures. The effect of the reactor pressure on the structural properties of the h-BN films was systematically investigated by various spectroscopic and microscopic analysis tools including near-edge X-ray absorption fine structure spectroscopy and transmission electron microscopy. We found that the defects in the MOCVD-grown h-BN films such as nitrogen vacancies and grain boundaries were strongly affected by the reactor pressure, which was elucidated by pressure-dependent change of Gibbs free energy for the nuclei formation and reaction rates. Based on our experimental observations, the growth strategies were discussed for realization of high-quality, multiwafer-scale uniformity h-BN films grown by MOCVD at temperature of 1050 °C.