Cao, Xuan Wu, Fanqi Lau, Christian Liu, Yihang Liu, Qingzhou Zhou, Chongwu Top-Contact Self-Aligned Printing for High-Performance Carbon Nanotube Thin-Film Transistors with Sub-Micron Channel Length Semiconducting single-wall carbon nanotubes are ideal semiconductors for printed thin-film transistors due to their excellent electrical performance and intrinsic printability with solution-based deposition. However, limited by resolution and registration accuracy of current printing techniques, previously reported fully printed nanotube transistors had rather long channel lengths (>20 μm) and consequently low current-drive capabilities (<0.2 μA/μm). Here we report fully inkjet printed nanotube transistors with dramatically enhanced on-state current density of ∼4.5 μA/μm by downscaling the devices to a sub-micron channel length with top-contact self-aligned printing and employing high-capacitance ion gel as the gate dielectric. Also, the printed transistors exhibited a high on/off ratio of ∼10<sup>5</sup>, low-voltage operation, and good mobility of ∼15.03 cm<sup>2</sup> V<sup>–1</sup>s<sup>–1</sup>. These advantageous features of our printed transistors are very promising for future high-definition printed displays and sensing systems, low-power consumer electronics, and large-scale integration of printed electronics. nanotube transistors;Sub-Micron Channel Length Semiconducting single-wall carbon nanotubes;Top-Contact Self-Aligned Printing;high-capacitance ion gel;sub-micron channel length;electronic;High-Performance Carbon Nanotube Thin-Film Transistors;top-contact self-aligned printing 2017-02-14
    https://acs.figshare.com/articles/journal_contribution/Top-Contact_Self-Aligned_Printing_for_High-Performance_Carbon_Nanotube_Thin-Film_Transistors_with_Sub-Micron_Channel_Length/4650316
10.1021/acsnano.6b08185.s001