10.1021/acsami.6b10384.s001 Pulikanti Guruprasad Reddy Pulikanti Guruprasad Reddy Satyendra Prakash Pal Satyendra Prakash Pal Pawan Kumar Pawan Kumar Chullikkattil P. Pradeep Chullikkattil P. Pradeep Subrata Ghosh Subrata Ghosh Satinder K. Sharma Satinder K. Sharma Kenneth E. Gonsalves Kenneth E. Gonsalves Polyarylenesulfonium Salt as a Novel and Versatile Nonchemically Amplified Negative Tone Photoresist for High-Resolution Extreme Ultraviolet Lithography Applications American Chemical Society 2016 Versatile Nonchemically Amplified PAS NGL Tone Photoresist next-generation lithography Polyarylenesulfonium Salt polyarylenesulfonium polymer tone photoresist EUV 20 nm features Ultraviolet Lithography Applications 2016-12-23 00:00:00 Journal contribution https://acs.figshare.com/articles/journal_contribution/Polyarylenesulfonium_Salt_as_a_Novel_and_Versatile_Nonchemically_Amplified_Negative_Tone_Photoresist_for_High-Resolution_Extreme_Ultraviolet_Lithography_Applications/4498472 The present report demonstrates the potential of a polyarylenesulfonium polymer, poly­[methyl­(4-(phenylthio)-phenyl)­sulfoniumtrifluoromethanesulfonate] (PAS), as a versatile nonchemically amplified negative tone photoresist for next-generation lithography (NGL) applications starting from i-line (λ ∼ 365 nm) to extreme ultraviolet (EUV, λ ∼ 13.5 nm) lithography. PAS exhibited considerable contrast (γ), 0.08, toward EUV and patterned 20 nm features successfully.