10.1021/acsami.6b10384.s001
Pulikanti
Guruprasad Reddy
Pulikanti
Guruprasad
Reddy
Satyendra Prakash Pal
Satyendra Prakash
Pal
Pawan Kumar
Pawan
Kumar
Chullikkattil P. Pradeep
Chullikkattil P.
Pradeep
Subrata Ghosh
Subrata
Ghosh
Satinder K. Sharma
Satinder K.
Sharma
Kenneth E. Gonsalves
Kenneth E.
Gonsalves
Polyarylenesulfonium
Salt as a Novel and Versatile
Nonchemically Amplified Negative Tone Photoresist for High-Resolution
Extreme Ultraviolet Lithography Applications
American Chemical Society
2016
Versatile Nonchemically Amplified
PAS
NGL
Tone Photoresist
next-generation lithography
Polyarylenesulfonium Salt
polyarylenesulfonium polymer
tone photoresist
EUV
20 nm features
Ultraviolet Lithography Applications
2016-12-23 00:00:00
Journal contribution
https://acs.figshare.com/articles/journal_contribution/Polyarylenesulfonium_Salt_as_a_Novel_and_Versatile_Nonchemically_Amplified_Negative_Tone_Photoresist_for_High-Resolution_Extreme_Ultraviolet_Lithography_Applications/4498472
The
present report demonstrates the potential of a polyarylenesulfonium
polymer, poly[methyl(4-(phenylthio)-phenyl)sulfoniumtrifluoromethanesulfonate]
(PAS), as a versatile nonchemically amplified negative tone photoresist
for next-generation lithography (NGL) applications starting from i-line
(λ ∼ 365 nm) to extreme ultraviolet (EUV, λ ∼
13.5 nm) lithography. PAS exhibited considerable contrast (γ),
0.08, toward EUV and patterned 20 nm features successfully.