Ji, Yongsung Yang, Yang Lee, Seoung-Ki Ruan, Gedeng Kim, Tae-Wook Fei, Huilong Lee, Seung-Hoon Kim, Dong-Yu Yoon, Jongwon Tour, James M. Flexible Nanoporous WO<sub>3–<i>x</i></sub> Nonvolatile Memory Device Flexible resistive random access memory (RRAM) devices have attracted great interest for future nonvolatile memories. However, making active layer films at high temperature can be a hindrance to RRAM device fabrication on flexible substrates. Here, we introduced a flexible nanoporous (NP) WO<sub>3–<i>x</i></sub> RRAM device using anodic treatment in a room-temperature process. The flexible NP WO<sub>3–<i>x</i></sub> RRAM device showed bipolar switching characteristics and a high <i>I</i><sub>ON</sub>/<i>I</i><sub>OFF</sub> ratio of ∼10<sup>5</sup>. The device also showed stable retention time over 5 × 10<sup>5</sup> s, outstanding cell-to-cell uniformity, and bending endurance over 10<sup>3</sup> cycles when measured in both the flat and the maximum bending conditions. layer films;WO;OFF ratio;future nonvolatile memories;retention time;NP;access memory;anodic treatment;RRAM device fabrication;10 3 cycles 2016-08-02
    https://acs.figshare.com/articles/journal_contribution/Flexible_Nanoporous_WO_sub_3_i_x_i_sub_Nonvolatile_Memory_Device/3552762
10.1021/acsnano.6b02711.s001