10.1021/acsnano.6b02711.s001
Yongsung Ji
Yongsung
Ji
Yang Yang
Yang
Yang
Seoung-Ki Lee
Seoung-Ki
Lee
Gedeng Ruan
Gedeng
Ruan
Tae-Wook Kim
Tae-Wook
Kim
Huilong Fei
Huilong
Fei
Seung-Hoon Lee
Seung-Hoon
Lee
Dong-Yu Kim
Dong-Yu
Kim
Jongwon Yoon
Jongwon
Yoon
James M. Tour
James M.
Tour
Flexible Nanoporous WO<sub>3–<i>x</i></sub> Nonvolatile Memory Device
American Chemical Society
2016
layer films
WO
OFF ratio
future nonvolatile memories
retention time
NP
access memory
anodic treatment
RRAM device fabrication
10 3 cycles
2016-08-02 00:00:00
Journal contribution
https://acs.figshare.com/articles/journal_contribution/Flexible_Nanoporous_WO_sub_3_i_x_i_sub_Nonvolatile_Memory_Device/3552762
Flexible resistive
random access memory (RRAM) devices have attracted
great interest for future nonvolatile memories. However, making active
layer films at high temperature can be a hindrance to RRAM device
fabrication on flexible substrates. Here, we introduced a flexible
nanoporous (NP) WO<sub>3–<i>x</i></sub> RRAM device
using anodic treatment in a room-temperature process. The flexible
NP WO<sub>3–<i>x</i></sub> RRAM device showed bipolar
switching characteristics and a high <i>I</i><sub>ON</sub>/<i>I</i><sub>OFF</sub> ratio of ∼10<sup>5</sup>. The device also showed stable retention time over 5 × 10<sup>5</sup> s, outstanding cell-to-cell uniformity, and bending endurance
over 10<sup>3</sup> cycles when measured in both the flat and the
maximum bending conditions.