Atomically
Thin Ohmic Edge Contacts Between Two-Dimensional
Materials
Marcos
H. D. Guimarães
Hui Gao
Yimo Han
Kibum Kang
Saien Xie
Cheol-Joo Kim
David
A. Muller
Daniel C. Ralph
Jiwoong Park
10.1021/acsnano.6b02879.s001
https://acs.figshare.com/articles/journal_contribution/Atomically_Thin_Ohmic_Edge_Contacts_Between_Two-Dimensional_Materials/3439334
With the decrease of the dimensions
of electronic devices, the
role played by electrical contacts is ever increasing, eventually
coming to dominate the overall device volume and total resistance.
This is especially problematic for monolayers of semiconducting transition-metal
dichalcogenides (TMDs), which are promising candidates for atomically
thin electronics. Ideal electrical contacts to them would require
the use of similarly thin electrode materials while maintaining low
contact resistances. Here we report a scalable method to fabricate
ohmic graphene edge contacts to two representative monolayer TMDs,
MoS<sub>2</sub> and WS<sub>2</sub>. The graphene and TMD layer are
laterally connected with wafer-scale homogeneity, no observable overlap
or gap, and a low average contact resistance of 30 kΩ·μm.
The resulting graphene edge contacts show linear current–voltage
(<i>I</i>–<i>V</i>) characteristics at
room temperature, with ohmic behavior maintained down to liquid helium
temperatures.
2016-06-14 00:00:00
graphene edge contacts
Ohmic Edge Contacts
WS 2
electrode materials
helium temperatures
TMD layer
MoS 2
contact resistance
graphene edge contacts show
scalable method
contact resistances
representative monolayer TMDs
device volume
room temperature