Zhou, S. Tao, X. Gu, Y. Thickness-Dependent Thermal Conductivity of Suspended Two-Dimensional Single-Crystal In<sub>2</sub>Se<sub>3</sub> Layers Grown by Chemical Vapor Deposition Using micro-Raman spectroscopy and finite-element simulations, we determine the in-plane thermal conductivity of suspended two-dimensional single-crystal In<sub>2</sub>Se<sub>3</sub> grown by chemical vapor deposition. The thermal conductivity shows a strong dependence on the layer thickness: it reaches ∼60 W/m·K at the thickness of 35 nm, and it decreases to ∼4 W/m·K for the 5 nm thick layer. This dependence demonstrates the significance of phonon surface scattering and also indicates changes to the phonon dispersion relations as the layer thickness decreases. The determination of the thickness-dependent thermal conductivity provides an important practical basis for advancing 2D In<sub>2</sub>Se<sub>3</sub>-based device technologies and, more generally, also enables fundamental insight into the limiting mechanisms for 2D thermal transport. conductivity;2Se Layers Grown;layer thickness decreases;chemical vapor deposition;nm;2 D;phonon dispersion relations;dependence;2Se device technologies 2016-02-17
    https://acs.figshare.com/articles/journal_contribution/Thickness_Dependent_Thermal_Conductivity_of_Suspended_Two_Dimensional_Single_Crystal_In_sub_2_sub_Se_sub_3_sub_Layers_Grown_by_Chemical_Vapor_Deposition/3061867
10.1021/acs.jpcc.5b10905.s001