10.1021/jp0733872.s001
Shadi A. Dayeh
Shadi A.
Dayeh
Edward T. Yu
Edward T.
Yu
Deli Wang
Deli
Wang
Growth of InAs Nanowires on SiO<sub>2</sub> Substrates: Nucleation, Evolution, and the Role of Au
Nanoparticles
American Chemical Society
2007
group V precursor
InAs NW morphology
InAs NW growth
III
SiO 2 substrates
VLS
NP
SiO 2 films
precursor flow rates
InAs nanowires
AsH 3 overpressure
OMVPE
InAs NWs
2007-09-13 00:00:00
Journal contribution
https://acs.figshare.com/articles/journal_contribution/Growth_of_InAs_Nanowires_on_SiO_sub_2_sub_Substrates_Nucleation_Evolution_and_the_Role_of_Au_Nanoparticles/2985979
We have studied the nucleation and growth of InAs nanowires (NWs) on SiO<sub>2</sub>/Si substrates by organometallic
vapor-phase epitaxy (OMVPE). Through systematic characterization of InAs NW morphology as a function
of V/III precursor ratio, precursor flow rates, growth temperature, growth time, and the presence/absence of
Au nanoparticles, a number of significant insights into InAs NW growth using OMVPE have been developed.
Specifically, we have found that (i) the growth of InAs NWs can be initiated from a single indium (In)
droplet, (ii) Au nanoparticles (NPs) enhance group V precursor (AsH<sub>3</sub>) pyrolysis but are not necessary to
nucleate growth, (iii) growth of InAs NWs on SiO<sub>2</sub> substrates occurs in the kinetically limited vapor−liquid−solid (VLS) growth regime, (iv) InAs NWs on SiO<sub>2</sub> films decompose at elevated temperatures even under
significant AsH<sub>3</sub> overpressure, and (v) the V/III ratio is the growth-rate-limiting factor in the VLS growth of
the InAs nanowires. Many of these findings on InAs NW growth can be generalized to and provide very
useful information for rational synthesis of other III−V compound semiconductor NWs.