An Organic/Si Nanowire Hybrid Field Configurable Transistor Qianxi Lai Zhiyong Li Lei Zhang Xuema Li William F. Stickle Zuhua Zhu Zhen Gu Theodore I. Kamins R. Stanley Williams Yong Chen 10.1021/nl073112y.s001 https://acs.figshare.com/articles/journal_contribution/An_Organic_Si_Nanowire_Hybrid_Field_Configurable_Transistor/2952277 We report a field configurable transistor (FCT) fabricated on a Si nanowire FET platform by integrating a thin film of conjugated polymer poly[2-methoxy-5-(2′-ethylhexyloxy)-<i>p</i>-phenylene vinylene] (MEH-PPV) and an ionic conductive layer (RbAg<sub>4</sub>I<sub>5</sub>) into the gate. The FCT can be precisely configured to desired nonvolatile analog state dynamically, repeatedly, and reversibly by controlling the concentration of iodide ions in the MEH-PPV layer with a gate voltage. The flexible configurability and plasticity of the FCT could facilitate field-programmable circuits for defect-tolerance and synapse-like devices for learning. 2008-03-12 00:00:00 gate voltage field configurable transistor Si nanowire FET platform nonvolatile analog state FCT conductive layer iodide ions RbAg 4I