10.1021/nl802324y.s001
Zhipeng Huang
Zhipeng
Huang
Xuanxiong Zhang
Xuanxiong
Zhang
Manfred Reiche
Manfred
Reiche
Lifeng Liu
Lifeng
Liu
Woo Lee
Woo
Lee
Tomohiro Shimizu
Tomohiro
Shimizu
Stephan Senz
Stephan
Senz
Ulrich Gösele
Ulrich
Gösele
Extended Arrays of Vertically Aligned Sub-10 nm Diameter [100] Si Nanowires by Metal-Assisted Chemical Etching
American Chemical Society
2008
diameter
AAO
anodic aluminum oxide
nm
density silicon nanowire
transmission electron microscopy
SiNW
metal film
2008-09-10 00:00:00
Journal contribution
https://acs.figshare.com/articles/journal_contribution/Extended_Arrays_of_Vertically_Aligned_Sub_10_nm_Diameter_100_Si_Nanowires_by_Metal_Assisted_Chemical_Etching/2915092
Large-area high density silicon nanowire (SiNW) arrays were fabricated by metal-assisted chemical etching of silicon, utilizing anodic aluminum oxide (AAO) as a patterning mask of a thin metallic film on a Si (100) substrate. Both the diameter of the pores in the AAO mask and the thickness of the metal film affected the diameter of SiNWs. The diameter of the SiNWs decreased with an increase of thickness of the metal film. Large-area SiNWs with average diameters of 20 nm down to 8 nm and wire densities as high as 10<sup>10</sup> wires/cm<sup>2</sup> were accomplished. These SiNWs were single crystalline and vertically aligned to the (100) substrate. It was revealed by transmission electron microscopy that the SiNWs were of high crystalline quality and showed a smooth surface.