10.1021/nl802324y.s001 Zhipeng Huang Zhipeng Huang Xuanxiong Zhang Xuanxiong Zhang Manfred Reiche Manfred Reiche Lifeng Liu Lifeng Liu Woo Lee Woo Lee Tomohiro Shimizu Tomohiro Shimizu Stephan Senz Stephan Senz Ulrich Gösele Ulrich Gösele Extended Arrays of Vertically Aligned Sub-10 nm Diameter [100] Si Nanowires by Metal-Assisted Chemical Etching American Chemical Society 2008 diameter AAO anodic aluminum oxide nm density silicon nanowire transmission electron microscopy SiNW metal film 2008-09-10 00:00:00 Journal contribution https://acs.figshare.com/articles/journal_contribution/Extended_Arrays_of_Vertically_Aligned_Sub_10_nm_Diameter_100_Si_Nanowires_by_Metal_Assisted_Chemical_Etching/2915092 Large-area high density silicon nanowire (SiNW) arrays were fabricated by metal-assisted chemical etching of silicon, utilizing anodic aluminum oxide (AAO) as a patterning mask of a thin metallic film on a Si (100) substrate. Both the diameter of the pores in the AAO mask and the thickness of the metal film affected the diameter of SiNWs. The diameter of the SiNWs decreased with an increase of thickness of the metal film. Large-area SiNWs with average diameters of 20 nm down to 8 nm and wire densities as high as 10<sup>10</sup> wires/cm<sup>2</sup> were accomplished. These SiNWs were single crystalline and vertically aligned to the (100) substrate. It was revealed by transmission electron microscopy that the SiNWs were of high crystalline quality and showed a smooth surface.