10.1021/jp806748f.s001 Jinyong Wang Jinyong Wang Rongli Cui Rongli Cui Yu Liu Yu Liu Weiwei Zhou Weiwei Zhou Zhong Jin Zhong Jin Yan Li Yan Li Abnormal Raman Intensity of Single-Walled Carbon Nanotubes Grown on Silica Spheres American Chemical Society 2009 uniaxial strain G mode changes Silica SpheresResonant Raman nanotube tube SWCNT chemical vapor deposition growth process Raman spectra show semiconducting RBM Weak uniaxial strain Abnormal Raman Intensity 2009-04-02 00:00:00 Journal contribution https://acs.figshare.com/articles/journal_contribution/Abnormal_Raman_Intensity_of_Single_Walled_Carbon_Nanotubes_Grown_on_Silica_Spheres/2867014 Resonant Raman scattering experiments are carried on single-walled carbon nanotubes (SWCNTs) suspended between silica spheres. Weak uniaxial strain is introduced into these tubes during the chemical vapor deposition growth process. The metallic nanotubes exhibit different behavior from their semiconducting counterparts under the uniaxial strain. The G band shows no change in position and shape for metallic nanotubes, while for semiconducting nanotubes the G mode changes in profile but does not change in position. The radial breathing mode (RBM) maintains its position under the uniaxial strain for all the tubes. Most of the Raman spectra show an intense RBM, even for large diameter (∼2 nm) semiconducting SWCNTs and armchair SWCNTs. The large RBM/G band intensity ratio is ascribed to the much longer lifetime of the excited electronic states in the resonant process.