%0 Journal Article
%A Lin, Jing
%A Huang, Yang
%A Bando, Yoshio
%A Tang, Chengchun
%A Li, Chun
%A Golberg, Dmitri
%D 2010
%T Synthesis of In2O3 Nanowire-Decorated Ga2O3 Nanobelt Heterostructures and Their Electrical and Field-Emission Properties
%U https://acs.figshare.com/articles/journal_contribution/Synthesis_of_In_sub_2_sub_O_sub_3_sub_Nanowire_Decorated_Ga_sub_2_sub_O_sub_3_sub_Nanobelt_Heterostructures_and_Their_Electrical_and_Field_Emission_Properties/2774401
%R 10.1021/nn100254f.s001
%2 https://acs.figshare.com/ndownloader/files/4468819
%K Ga 2O nanobelt
%K 2O Ga 2O heterostructures
%K 2O nanowire forms
%K optoelectronic nanodevices
%X We report on the synthesis of In2O3 nanowire-decorated Ga2O3 nanobelt heterostructures via a simple catalyst-free method. A typical heterostructure, where an In2O3 nanowire forms a sort of a “dorsal fin” on the Ga2O3 nanobelt, exhibits the T-shaped cross-section. The structure, electrical porperties, and field-emission properties of this material are systematically investigated. The heterostructures possess a typical n-type semiconducting behavior with enhanced conductivity. Field-emission measurements show that they have a low turn-on field (∼1.31 V/μm) and a high field-enhancement factor (over 4000). The excellent field-emission characteristics are attributed to their special geometry and good electrical properties. The present In2O3-decorated Ga2O3 heterostructures are envisaged to be decent field-emitters useful in advanced electronic and optoelectronic nanodevices.
%I ACS Publications