%0 Journal Article %A Liu, Yi-Yang %A Song, Cheng-Li %A Zeng, Wei-Jing %A Zhou, Kai-Ge %A Shi, Zi-Fa %A Ma, Chong-Bo %A Yang, Feng %A Zhang, Hao-Li %A Gong, Xiong %D 2010 %T High and Balanced Hole and Electron Mobilities from Ambipolar Thin-Film Transistors Based on Nitrogen-Containing Oligoacences %U https://acs.figshare.com/articles/journal_contribution/High_and_Balanced_Hole_and_Electron_Mobilities_from_Ambipolar_Thin_Film_Transistors_Based_on_Nitrogen_Containing_Oligoacences/2710231 %R 10.1021/ja107046s.s001 %2 https://acs.figshare.com/ndownloader/files/4386181 %K μ h %K cm %K ambipolar FET properties %K μ e %K semiconductor %K strategy %K oligoacene %K material %X We demonstrate a strategy for designing high-performance, ambipolar, acene-based field-effect transistor (FET) materials, which is based on the replacement of C−H moieties by nitrogen atoms in oligoacenes. By using this strategy, two organic semiconductors, 6,13-bis(triisopropylsilylethynyl)anthradipyridine (1) and 8,9,10,11-tetrafluoro-6,13-bis(triisopropylsilylethynyl)-1-azapentacene (3), were synthesized and their FET characteristics studied. Both materials exhibit high and balanced hole and electron mobilities, 1 having μh and μe of 0.11 and 0.15 cm2/V·s and 3 having μh and μe of 0.08 and 0.09 cm2/V·s, respectively. The successful demonstration of high and balanced ambipolar FET properties from nitrogen-containing oligoacenes opens up new opportunities for designing high-performance ambipolar organic semiconductors. %I ACS Publications