%0 Journal Article
%A Liu, Yi-Yang
%A Song, Cheng-Li
%A Zeng, Wei-Jing
%A Zhou, Kai-Ge
%A Shi, Zi-Fa
%A Ma, Chong-Bo
%A Yang, Feng
%A Zhang, Hao-Li
%A Gong, Xiong
%D 2010
%T High and Balanced Hole and Electron Mobilities from Ambipolar Thin-Film Transistors Based on Nitrogen-Containing Oligoacences
%U https://acs.figshare.com/articles/journal_contribution/High_and_Balanced_Hole_and_Electron_Mobilities_from_Ambipolar_Thin_Film_Transistors_Based_on_Nitrogen_Containing_Oligoacences/2710231
%R 10.1021/ja107046s.s001
%2 https://acs.figshare.com/ndownloader/files/4386181
%K μ h
%K cm
%K ambipolar FET properties
%K μ e
%K semiconductor
%K strategy
%K oligoacene
%K material
%X We demonstrate a strategy for designing high-performance, ambipolar, acene-based field-effect transistor (FET) materials, which is based on the replacement of C−H moieties by nitrogen atoms in oligoacenes. By using this strategy, two organic semiconductors, 6,13-bis(triisopropylsilylethynyl)anthradipyridine (1) and 8,9,10,11-tetrafluoro-6,13-bis(triisopropylsilylethynyl)-1-azapentacene (3), were synthesized and their FET characteristics studied. Both materials exhibit high and balanced hole and electron mobilities, 1 having μh and μe of 0.11 and 0.15 cm2/V·s and 3 having μh and μe of 0.08 and 0.09 cm2/V·s, respectively. The successful demonstration of high and balanced ambipolar FET properties from nitrogen-containing oligoacenes opens up new opportunities for designing high-performance ambipolar organic semiconductors.
%I ACS Publications