Transient Rayleigh Scattering:
A New Probe of Picosecond
Carrier Dynamics in a Single Semiconductor Nanowire
Mohammad Montazeri
Howard E. Jackson
Leigh M. Smith
Jan M. Yarrison-Rice
Jung-Hyun Kang
Qiang Gao
Hark Hoe Tan
Chennupati Jagadish
10.1021/nl302767u.s001
https://acs.figshare.com/articles/journal_contribution/Transient_Rayleigh_Scattering_A_New_Probe_of_Picosecond_Carrier_Dynamics_in_a_Single_Semiconductor_Nanowire/2479396
Using a new technique, transient Rayleigh scattering,
we show that
measurements from a single GaAs/AlGaAs core–shell semiconductor
nanowire provide sensitive and detailed information on the time evolution
of the density and temperature of the electrons and holes after photoexcitation
by an intense laser pulse. Through band filling, band gap renormalization,
and plasma screening, the presence of a dense and hot electron–hole
plasma directly influences the real and imaginary parts of the complex
index of refraction that in turn affects the spectral dependence of
the Rayleigh scattering cross-section in well-defined ways. By measuring
this spectral dependence as a function of time, we directly determine
the thermodynamically independent density and temperature of the electrons
and holes as a function of time after pulsed excitation as the carriers
thermalize to the lattice temperature. We successfully model the results
by including ambipolar transport, recombination, and cooling through
optic and acoustic phonon emission that quantify the hole mobility
at ∼68,000 cm<sup>2</sup>/V<i>·</i>s, linear
decay constant at 380 ps, bimolecular recombination rate at 4.8 ×
10<sup>–9</sup> cm<sup>3</sup>/s and the energy-loss rate of
plasma due to optical and acoustic phonon emission.
2012-10-10 00:00:00
density
band gap renormalization
Transient Rayleigh Scattering
plasma
electron
Picosecond Carrier Dynamics
dependence
cm
function
phonon emission
Single Semiconductor NanowireUsing
recombination