10.1021/jp307152s.s001
Vignesh Suresh
Vignesh
Suresh
Meiyu
Stella Huang
Meiyu
Stella
Huang
M. P. Srinivasan
M. P.
Srinivasan
Cao Guan
Cao
Guan
Hong Jin Fan
Hong Jin
Fan
Sivashankar Krishnamoorthy
Sivashankar
Krishnamoorthy
Robust, High-Density Zinc
Oxide Nanoarrays by Nanoimprint
Lithography-Assisted Area-Selective Atomic Layer Deposition
American Chemical Society
2012
stability
density
NIL
MOS capacitors display
block copolymer lithography
pattern
nonvolatile flash memory devices
tunneling oxide thickness
ZnO
BCL
array
ALD
nm
material quality
2012-11-08 00:00:00
Journal contribution
https://acs.figshare.com/articles/journal_contribution/Robust_High_Density_Zinc_Oxide_Nanoarrays_by_Nanoimprint_Lithography_Assisted_Area_Selective_Atomic_Layer_Deposition/2470660
Polymer templates realized through a combination of block
copolymer
lithography (BCL) and nanoimprint lithography (NIL) are used to direct
atomic layer deposition (ALD) to obtain high-quality ZnO nanopatterns.
These patterns present a uniform array of ZnO nanostructures with
sub-100 nm feature and spatial resolutions, exhibiting narrow distributions
in size and separation, and enhanced mechanical stability. The process
benefits from the high lateral resolutions determined by the copolymer
pattern, controlled growth rates, material quality and enhanced mechanical
stability from ALD and repeatability and throughput from NIL. The
protocol is generic and readily extendible to a range of other materials
that can be grown through ALD. By virtue of their high feature density
and material quality, the electrical characteristics of the arrays
incorporated within MOS capacitors display high hole-storage density
of 7.39 × 10<sup>18</sup> cm<sup>–3</sup>, excellent retention
of ∼97% (for 1000 s of discharging), despite low tunneling
oxide thickness of 3 nm. These attributes favor potential application
of these ZnO arrays as charge-storage centers in nonvolatile flash
memory devices.