10.1021/jp502000s.s001
Wenhua Zhang
Wenhua
Zhang
Kai Wang
Kai
Wang
Lele Fan
Lele
Fan
Lingyun Liu
Lingyun
Liu
Panpan Guo
Panpan
Guo
Chongwen Zou
Chongwen
Zou
Jiaou Wang
Jiaou
Wang
Haijie Qian
Haijie
Qian
Kurash Ibrahim
Kurash
Ibrahim
Wensheng Yan
Wensheng
Yan
Faqiang Xu
Faqiang
Xu
Ziyu Wu
Ziyu
Wu
Hole Carriers
Doping Effect on the Metal–Insulator
Transition of N‑Incorporated Vanadium Dioxide Thin Films
American Chemical Society
2014
VO 1.87N samples
SRPES
energy band gap
oxygen atoms
charge carriers
nitrogen atoms
MIT temperature
VO 1.9N
MIT depression
substituent position
M 1 phase
VO 2.
phase transition behavior
hole Carriers Doping Effect
XANES
VO 2 films
nitrogen incorporation
crystal lattice
hole carriers
2014-06-19 00:00:00
Journal contribution
https://acs.figshare.com/articles/journal_contribution/Hole_Carriers_Doping_Effect_on_the_Metal_Insulator_Transition_of_N_Incorporated_Vanadium_Dioxide_Thin_Films/2281408
The
coupling of doped charge carriers with the crystal lattice
is an efficient route to modulate the phase transition behavior of
VO<sub>2</sub>. In the current work, the N-incorporated VO<sub>2</sub> samples are prepared through the low-energy N<sub>2</sub><sup>+</sup> ion sputtering of the crystalline VO<sub>2</sub> films. The critical
temperatures (<i>T</i><sub>c</sub>) of the metal–insulator
transition (MIT) process are observed to decrease with a value of
∼18 °C for VO<sub>1.9</sub>N<sub>0.1</sub> and VO<sub>1.87</sub>N<sub>0.13</sub> samples. The effects of nitrogen incorporation
on the MIT depression have been revealed by the electronic structural
characterizations via the X-ray adsorption near-edge structure (XANES)
spectroscopy and photon electronic spectroscopy (SRPES). The implanted
nitrogen atoms are identified to coordinate with the V<sup>4+</sup> ions at the substituent position of oxygen atoms. The p-type dopant
provides the hole carriers into the d<sub>∥</sub> sub-bands,
resulting in the attenuation of the interaction within V–V
dimer and the narrowing of the energy band gap in M1 phase. Both aspects
unanimously facilitate the depression of the MIT temperature in N-incorporated
VO<sub>2</sub>.