10.1021/nn4066473.s001 Xuejun Xie Xuejun Xie Deblina Sarkar Deblina Sarkar Wei Liu Wei Liu Jiahao Kang Jiahao Kang Ognian Marinov Ognian Marinov M. Jamal Deen M. Jamal Deen Kaustav Banerjee Kaustav Banerjee Low-Frequency Noise in Bilayer MoS<sub>2</sub> Transistor American Chemical Society 2014 graphene transistors bilayer MoS 2 channel transistors show transition metal dichalcogenides carrier number fluctuation model van der Waals bonds 2 D materials annealing process trap density TMD surface contaminants decay time 2 D material surface traps molybdenum disulfide noise shape dependency 2 D device channel gate voltage van der Waals noise measurements noise peak 2014-06-24 00:00:00 Journal contribution https://acs.figshare.com/articles/journal_contribution/Low_Frequency_Noise_in_Bilayer_MoS_sub_2_sub_Transistor/2280385 Low-frequency noise is a significant limitation on the performance of nanoscale electronic devices. This limitation is especially important for devices based on two-dimensional (2D) materials such as graphene and transition metal dichalcogenides (TMDs), which have atomically thin bodies and, hence, are severely affected by surface contaminants. Here, we investigate the low-frequency noise of transistors based on molybdenum disulfide (MoS<sub>2</sub>), which is a typical example of TMD. The noise measurements performed on bilayer MoS<sub>2</sub> channel transistors show a <i>noise peak</i> in the gate-voltage dependence data, which has also been reported for graphene. To understand the peak, a trap decay-time based model is developed by revisiting the carrier number fluctuation model. Our analysis reveals that the peak originates from the fact that the decay time of the traps for a 2D device channel is governed by the van der Waals bonds between the 2D material and the surroundings. Our model is generic to all 2D materials and can be applied to explain the V, M and Λ shaped dependence of noise on the gate voltage in graphene transistors, as well as the noise shape dependency on the number of atomic layers of other 2D materials. Since the van der Waals bonding between the surface traps and 2D materials is weak, in accordance with the developed physical model, an annealing process is shown to significantly reduce the trap density, thereby reducing the low-frequency noise.