10.1021/acs.nanolett.5b00630.s001
Yunhong Ding
Yunhong
Ding
Xiaolong Zhu
Xiaolong
Zhu
Sanshui Xiao
Sanshui
Xiao
Hao Hu
Hao
Hu
Lars Hagedorn Frandsen
Lars Hagedorn
Frandsen
N. Asger Mortensen
N. Asger
Mortensen
Kresten Yvind
Kresten
Yvind
Effective Electro-Optical Modulation with High Extinction
Ratio by a Graphene–Silicon Microring Resonator
American Chemical Society
2015
control optoelectronic properties
graphene
voltage
High Extinction Ratio
interaction
ultralarge absorption bandwidth
modulation depth
microring
novel optoelectronic applications thanks
device
dB
2015-07-08 00:00:00
Journal contribution
https://acs.figshare.com/articles/journal_contribution/Effective_Electro_Optical_Modulation_with_High_Extinction_Ratio_by_a_Graphene_Silicon_Microring_Resonator/2203795
Graphene opens up for novel optoelectronic
applications thanks to its high carrier mobility, ultralarge absorption
bandwidth, and extremely fast material response. In particular, the
opportunity to control optoelectronic properties through tuning of
the Fermi level enables electro-optical modulation, optical–optical
switching, and other optoelectronics applications. However, achieving
a high modulation depth remains a challenge because of the modest
graphene-light interaction in the graphene–silicon devices,
typically, utilizing only a monolayer or few layers of graphene. Here,
we comprehensively study the interaction between graphene and a microring
resonator, and its influence on the optical modulation depth. We demonstrate
graphene–silicon microring devices showing a high modulation
depth of 12.5 dB with a relatively low bias voltage of 8.8 V. On–off
electro-optical switching with an extinction ratio of 3.8 dB is successfully
demonstrated by applying a square-waveform with a 4 V peak-to-peak
voltage.