10.1021/nn5057063.s001 Markus Rein Markus Rein Nils Richter Nils Richter Khaled Parvez Khaled Parvez Xinliang Feng Xinliang Feng Hermann Sachdev Hermann Sachdev Mathias Kläui Mathias Kläui Klaus Müllen Klaus Müllen Magnetoresistance and Charge Transport in Graphene Governed by Nitrogen Dopants American Chemical Society 2015 use quantum transport signals charge transport gap charge transport properties undoped samples MR doping temperature magnetotransport measurements charge carrier concentration CVD chemical vapor deposition 2015-02-24 00:00:00 Journal contribution https://acs.figshare.com/articles/journal_contribution/Magnetoresistance_and_Charge_Transport_in_Graphene_Governed_by_Nitrogen_Dopants/2193337 We identify the influence of nitrogen-doping on charge- and magnetotransport of single layer graphene by comparing doped and undoped samples. Both sample types are grown by chemical vapor deposition (CVD) and transferred in an identical process onto Si/SiO<sub>2</sub> wafers. We characterize the samples by Raman spectroscopy as well as by variable temperature magnetotransport measurements. Over the entire temperature range, the charge transport properties of all undoped samples are in line with literature values. The nitrogen doping instead leads to a 6-fold increase in the charge carrier concentration up to 4 × 10<sup>13</sup> cm<sup>–2</sup> at room temperature, indicating highly effective doping. Additionally it results in the opening of a charge transport gap as revealed by the temperature dependence of the resistance. The magnetotransport exhibits a conspicuous sign change from positive Lorentz magnetoresistance (MR) in undoped to large negative MR that we can attribute to the doping induced disorder. At low magnetic fields, we use quantum transport signals to quantify the transport properties. Analyses based on weak localization models allow us to determine an orders of magnitude decrease in the phase coherence and scattering times for doped samples, since the dopants act as effective scattering centers.