Oxygen Transport and Incorporation in Pt/HfO<sub>2</sub> Stacks Deposited on Germanium and Silicon RolimGuilherme Koszeniewski GobbiAngelo SoaresGabriel Vieira RadtkeCláudio 2015 Ge is a promising material to improve transistor performance. However, finding an efficient passivation strategy for this semiconductor is still a challenge. Annealing in O<sub>2</sub> of metal/dielectric stacks prepared on Ge can improve the electrical properties of the final structure. However, excessive Ge oxidation cannot take place. O isotopic tracing in conjunction with subnanometric depth profiling of <sup>18</sup>O were used to investigate oxygen transport and incorporation in Pt/HfO<sub>2</sub>/(Ge or Si) stacks. The supply of atomic oxygen (able to diffuse through HfO<sub>2</sub>) is a function of temperature and the number of available O<sub>2</sub> dissociation sites in HfO<sub>2</sub>. A Pt top layer promotes a more efficient O<sub>2</sub> dissociation, resulting in a higher O exchange in HfO<sub>2</sub> and a higher O supply at the HfO<sub>2</sub>/semiconductor interface. The different nature of the native oxides of Si and Ge has a direct influence on the resulting physicochemical modifications of the stacks prepared on these semiconductor materials.