10.1021/jp511127c.s001
Guilherme
Koszeniewski Rolim
Guilherme
Koszeniewski
Rolim
Angelo Gobbi
Angelo
Gobbi
Gabriel Vieira Soares
Gabriel Vieira
Soares
Cláudio Radtke
Cláudio
Radtke
Oxygen
Transport and Incorporation in Pt/HfO<sub>2</sub> Stacks Deposited
on Germanium and Silicon
American Chemical Society
2015
HfO 2.
Pt
Oxygen Transport
semiconductor materials
O 2 dissociation
O exchange
O 2 dissociation sites
Ge oxidation
oxygen transport
Si
physicochemical modifications
O supply
HfO 2
passivation strategy
subnanometric depth
O 2
stack
18 O
transistor performance
2015-02-26 00:00:00
Journal contribution
https://acs.figshare.com/articles/journal_contribution/Oxygen_Transport_and_Incorporation_in_Pt_HfO_sub_2_sub_Stacks_Deposited_on_Germanium_and_Silicon/2192203
Ge
is a promising material to improve transistor performance. However,
finding an efficient passivation strategy for this semiconductor is
still a challenge. Annealing in O<sub>2</sub> of metal/dielectric
stacks prepared on Ge can improve the electrical properties of the
final structure. However, excessive Ge oxidation cannot take place.
O isotopic tracing in conjunction with subnanometric depth profiling
of <sup>18</sup>O were used to investigate oxygen transport and incorporation
in Pt/HfO<sub>2</sub>/(Ge or Si) stacks. The supply of atomic oxygen
(able to diffuse through HfO<sub>2</sub>) is a function of temperature
and the number of available O<sub>2</sub> dissociation sites in HfO<sub>2</sub>. A Pt top layer promotes a more efficient O<sub>2</sub> dissociation,
resulting in a higher O exchange in HfO<sub>2</sub> and a higher O
supply at the HfO<sub>2</sub>/semiconductor interface. The different
nature of the native oxides of Si and Ge has a direct influence on
the resulting physicochemical modifications of the stacks prepared
on these semiconductor materials.