10.1021/jp511127c.s001 Guilherme Koszeniewski Rolim Guilherme Koszeniewski Rolim Angelo Gobbi Angelo Gobbi Gabriel Vieira Soares Gabriel Vieira Soares Cláudio Radtke Cláudio Radtke Oxygen Transport and Incorporation in Pt/HfO<sub>2</sub> Stacks Deposited on Germanium and Silicon American Chemical Society 2015 HfO 2. Pt Oxygen Transport semiconductor materials O 2 dissociation O exchange O 2 dissociation sites Ge oxidation oxygen transport Si physicochemical modifications O supply HfO 2 passivation strategy subnanometric depth O 2 stack 18 O transistor performance 2015-02-26 00:00:00 Journal contribution https://acs.figshare.com/articles/journal_contribution/Oxygen_Transport_and_Incorporation_in_Pt_HfO_sub_2_sub_Stacks_Deposited_on_Germanium_and_Silicon/2192203 Ge is a promising material to improve transistor performance. However, finding an efficient passivation strategy for this semiconductor is still a challenge. Annealing in O<sub>2</sub> of metal/dielectric stacks prepared on Ge can improve the electrical properties of the final structure. However, excessive Ge oxidation cannot take place. O isotopic tracing in conjunction with subnanometric depth profiling of <sup>18</sup>O were used to investigate oxygen transport and incorporation in Pt/HfO<sub>2</sub>/(Ge or Si) stacks. The supply of atomic oxygen (able to diffuse through HfO<sub>2</sub>) is a function of temperature and the number of available O<sub>2</sub> dissociation sites in HfO<sub>2</sub>. A Pt top layer promotes a more efficient O<sub>2</sub> dissociation, resulting in a higher O exchange in HfO<sub>2</sub> and a higher O supply at the HfO<sub>2</sub>/semiconductor interface. The different nature of the native oxides of Si and Ge has a direct influence on the resulting physicochemical modifications of the stacks prepared on these semiconductor materials.