10.1021/acs.nanolett.5b01704.s001
Gwangwoo Kim
Gwangwoo
Kim
Hyunseob Lim
Hyunseob
Lim
Kyung Yeol Ma
Kyung Yeol
Ma
A-Rang Jang
A-Rang
Jang
Gyeong Hee Ryu
Gyeong Hee
Ryu
Minbok Jung
Minbok
Jung
Hyung-Joon Shin
Hyung-Joon
Shin
Zonghoon Lee
Zonghoon
Lee
Hyeon Suk Shin
Hyeon Suk
Shin
Catalytic Conversion of Hexagonal Boron Nitride to
Graphene for In-Plane Heterostructures
American Chemical Society
2015
graphene
Pt substrate
2 D materials
Hexagonal Boron Nitride
2015-07-08 00:00:00
Journal contribution
https://acs.figshare.com/articles/journal_contribution/Catalytic_Conversion_of_Hexagonal_Boron_Nitride_to_Graphene_for_In_Plane_Heterostructures/2151850
Heterostructures of hexagonal boron
nitride (h-BN) and graphene have attracted a great deal of attention
for potential applications in 2D materials. Although several methods
have been developed to produce this material through the partial substitution
reaction of graphene, the reverse reaction has not been reported.
Though the endothermic nature of this reaction might account for the
difficulty and previous absence of such a process, we report herein
a new chemical route in which the Pt substrate plays a catalytic role.
We propose that this reaction proceeds through h-BN hydrogenation;
subsequent graphene growth quickly replaces the initially etched region.
Importantly, this conversion reaction enables the controlled formation
of patterned in-plane graphene/h-BN heterostructures, without needing
the commonly employed protecting mask, simply by using a patterned
Pt substrate.