%0 Journal Article %A Constantinou, Marios %A Stolojan, Vlad %A Rajeev, Kiron Prabha %A Hinder, Steven %A Fisher, Brett %A Bogart, Timothy D. %A Korgel, Brian A. %A Shkunov, Maxim %D 2015 %T Interface Passivation and Trap Reduction via a Solution-Based Method for Near-Zero Hysteresis Nanowire Field-Effect Transistors %U https://acs.figshare.com/articles/journal_contribution/Interface_Passivation_and_Trap_Reduction_via_a_Solution_Based_Method_for_Near_Zero_Hysteresis_Nanowire_Field_Effect_Transistors/2121697 %R 10.1021/acsami.5b07140.s001 %2 https://acs.figshare.com/ndownloader/files/3755506 %K oxidizing agent %K 1.5 V hysteresis %K air exposure %K DMF %K hysteresis reduction %K 1000 h %K 2 orders %K polyphenylsilane NW shell stoichiometric composition %K Trap Reduction %K NW FET performance %K transistor currents %K NW powder %K 32 V %K shell oxidation effect %K surface passivation %K interface Passivation %K Si NWs %X In this letter, we demonstrate a solution-based method for a one-step deposition and surface passivation of the as-grown silicon nanowires (Si NWs). Using N,N-dimethylformamide (DMF) as a mild oxidizing agent, the NWs’ surface traps density was reduced by over 2 orders of magnitude from 1 × 1013 cm–2 in pristine NWs to 3.7 × 1010 cm–2 in DMF-treated NWs, leading to a dramatic hysteresis reduction in NW field-effect transistors (FETs) from up to 32 V to a near-zero hysteresis. The change of the polyphenylsilane NW shell stoichiometric composition was confirmed by X-ray photoelectron spectroscopy analysis showing a 35% increase in fully oxidized Si4+ species for DMF-treated NWs compared to dry NW powder. Additionally, a shell oxidation effect induced by DMF resulted is a more stable NW FET performance with steady transistor currents and only 1.5 V hysteresis after 1000 h of air exposure. %I ACS Publications