%0 Journal Article
%A Constantinou, Marios
%A Stolojan, Vlad
%A Rajeev, Kiron Prabha
%A Hinder, Steven
%A Fisher, Brett
%A Bogart, Timothy
D.
%A Korgel, Brian
A.
%A Shkunov, Maxim
%D 2015
%T Interface
Passivation and Trap Reduction via a Solution-Based
Method for Near-Zero Hysteresis Nanowire Field-Effect Transistors
%U https://acs.figshare.com/articles/journal_contribution/Interface_Passivation_and_Trap_Reduction_via_a_Solution_Based_Method_for_Near_Zero_Hysteresis_Nanowire_Field_Effect_Transistors/2121697
%R 10.1021/acsami.5b07140.s001
%2 https://acs.figshare.com/ndownloader/files/3755506
%K oxidizing agent
%K 1.5 V hysteresis
%K air exposure
%K DMF
%K hysteresis reduction
%K 1000 h
%K 2 orders
%K polyphenylsilane NW shell stoichiometric composition
%K Trap Reduction
%K NW FET performance
%K transistor currents
%K NW powder
%K 32 V
%K shell oxidation effect
%K surface passivation
%K interface Passivation
%K Si NWs
%X In
this letter, we demonstrate a solution-based method for a one-step
deposition and surface passivation of the as-grown silicon nanowires
(Si NWs). Using N,N-dimethylformamide
(DMF) as a mild oxidizing agent, the NWs’ surface traps density
was reduced by over 2 orders of magnitude from 1 × 1013 cm–2 in pristine NWs to 3.7 × 1010 cm–2 in DMF-treated NWs, leading to a dramatic
hysteresis reduction in NW field-effect transistors (FETs) from up
to 32 V to a near-zero hysteresis. The change of the polyphenylsilane
NW shell stoichiometric composition was confirmed by X-ray photoelectron
spectroscopy analysis showing a 35% increase in fully oxidized Si4+ species for DMF-treated NWs compared to dry NW powder. Additionally,
a shell oxidation effect induced by DMF resulted is a more stable
NW FET performance with steady transistor currents and only 1.5 V
hysteresis after 1000 h of air exposure.
%I ACS Publications